Shared Source Drain Transistors Rectangular Diffusion Area
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Solution Overview
Problem
The challenge in semiconductor device design is to reduce chip size while maintaining efficient transistor layout, as sharing source/drain regions between transistors with different gate widths leads to non-rectangular diffusion regions, affecting area reduction and performance.
Innovation Solution
The solution involves dividing diffusion regions of transistors with different gate widths to maintain rectangular shapes, allowing for shared source/drain regions, thereby reducing chip area by optimizing transistor configuration and layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If source/drain regions are shared between transistors with different gate widths, then chip area is reduced, but diffusion regions become non-rectangular (L-shaped) which degrades device characteristics
Solution Approach 1:
The diffusion region is divided into multiple rectangular segments (first diffusion region and second diffusion region) that are spatially separated. Each segment maintains a rectangular shape while collectively serving multiple transistors, thus preserving device characteristics while enabling area reduction through sharing.
Solution Approach 2:
The patent transitions from a planar shared diffusion region to a three-dimensional structure where multiple rectangular diffusion regions are stacked or positioned in different spatial layers. This dimensional change allows source/drain regions to be shared between transistors of different gate widths while each diffusion region maintains its rectangular geometry.
2Reliability
If source/drain regions are not shared to maintain rectangular diffusion regions, then device characteristics are preserved, but chip area cannot be reduced
Solution Approach 1:
Multiple rectangular diffusion regions are merged through electrical connection (via conductors) to form a shared source/drain structure. This merging allows the diffusion regions to serve multiple transistors simultaneously while each region maintains its rectangular shape, thus preserving device characteristics while achieving area reduction.
Solution Approach 2:
The rectangular diffusion regions are designed to serve multiple functions: each region maintains its rectangular geometry for optimal device characteristics while simultaneously acting as a shared source or drain for multiple transistors with different gate widths, achieving both reliability and area efficiency.
Data Source
AI summary
Disclosed herein is an apparatus that includes: a first diffusion region having a rectangular shape and including first and second source/drain regions arranged in the first direction; a second diffusion region having a rectangular shape and including third to fifth source/drain regions arranged in the first direction; a first gate electrode extending in a second direction, and provided between the first and second source/drain regions and between the third and fourth source/drain regions; and a second gate electrode extending in the second direction, and provided between the fourth and fifth source/drain regions. The first and third source/drain regions are brought into the same potential as each other, and the second and fourth source/drain regions are brought into the same potential as each other.