Shielded Conductive Vias for Semiconductor Signal Integrity

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Solution Overview

Problem

Conventional through silicon via formation methods result in high signal energy loss during transmission, leading to poor transmission quality due to the use of conductive materials like copper.

Innovation Solution

A semiconductor device with a conductive via structure that includes an inner conductive layer surrounded by a shielding layer, with an insulation material in between, and a metal layer on the substrate surface to reduce signal loss, utilizing ring structures and specific layer configurations to optimize electrical properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional through silicon via formation method is used, then manufacturing process is simple, but signal energy loss is high

Engineering Contradiction:
Improvesignal energy lossVSAvoidconductive via structure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The conductive via is segmented into multiple functional layers: an inner conductive layer for signal transmission and an outer shielding layer for electromagnetic shielding. This segmentation allows the via to simultaneously achieve low signal energy loss through the inner conductive path and reduced electromagnetic interference through the outer shielding layer, resolving the contradiction between simple structure and performance requirements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The conductive via employs composite material structure with different materials serving different functions: highly conductive material for the inner layer to minimize signal loss, and shielding material for the outer layer to provide electromagnetic shielding. This composite approach enables the via to achieve both low energy loss and appropriate device complexity.

Inventive Principle:
Principle #40Composite materials

2Reliability

If conventional conductive via is used, then structure is simple, but transmission quality is poor

Engineering Contradiction:
Improvetransmission qualityVSAvoidconductive via structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The via structure is divided into functional segments with the inner conductive layer dedicated to signal transmission and the outer shielding layer dedicated to electromagnetic shielding. This functional segmentation improves transmission quality by ensuring that signal integrity is maintained through the inner layer while the outer layer protects against external interference, justifying the increased structural complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The inner conductive layer acts as an intermediary between the signal source and the external environment, providing a controlled transmission path that isolates the signal from electromagnetic interference. This intermediary structure mediates between the simple conventional via and the requirement for high transmission quality, enabling reliable signal transmission through the added structural complexity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS8541883B2Semiconductor device having shielded conductive vias
Publication Date: 2013.09.24 ADVANCED SEMICON ENG INC
  • US8541883B2 patent drawing
  • US8541883B2 patent drawing
  • US8541883B2 patent drawing

AI summary

The present invention relates to a semiconductor device having a shielding layer. The semiconductor device includes a substrate, an inner metal layer, a shielding layer, an insulation material, a metal layer, a passivation layer and a redistribution layer. The inner metal layer is disposed in a through hole of the substrate. The shielding layer surrounds the inner annular metal. The insulation material is disposed between the inner metal layer and the shielding layer. The metal layer is disposed on a surface of the substrate, contacts the shielding layer and does not contact the inner metal layer. The redistribution layer is disposed in an opening of the passivation layer so as to contact the inner metal layer.