Shielding Compound for Uniform Thin Films on Complex Semiconductor Substrates
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Solution Overview
Problem
Existing technologies face challenges in achieving 100% step coverage and thickness uniformity for thin films on complex substrates, while also reducing impurities and maintaining film quality.
Innovation Solution
A shielding compound with a predetermined structure, containing nitrogen, oxygen, phosphorus, or sulfur, is used to form a shielded area on the substrate, reducing the deposition rate and growth rate of thin films, and improving step coverage and thickness uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deposition temperature is increased to achieve 100% step coverage, then step coverage is improved, but thin film growth rate increases excessively
Solution Approach 1:
The patent introduces a shielding compound to modify the deposition process parameters. The shielding compound adsorbs on substrate surfaces, creating a protective layer that alters the effective deposition conditions. This allows achieving 100% step coverage without the need to excessively increase deposition temperature, thereby controlling the thin film growth rate while maintaining uniform thickness on complex substrates
Solution Approach 2:
The shielding compound acts as an intermediary substance between the precursor and the substrate. It selectively adsorbs on certain substrate surfaces, preventing precursor adsorption in those areas and enabling precise control over thin film deposition patterns. This intermediary mechanism allows achieving uniform step coverage without relying solely on temperature control
2Productivity
If deposition temperature is reduced to control thin film growth rate, then growth rate is reduced, but film quality deteriorates due to increased impurities
Solution Approach 1:
The shielding compound serves as an intermediary that enables low-temperature deposition while maintaining film quality. By adsorbing on substrate surfaces and controlling precursor distribution, it compensates for the reduced thermal energy available at lower temperatures, ensuring complete reactions and minimal impurity incorporation in the deposited thin film
Solution Approach 2:
The introduction of shielding compound changes the effective deposition parameters, allowing the process to operate successfully at lower temperatures. The shielding compound modifies the reaction kinetics and precursor utilization efficiency, enabling high-quality film formation with reduced growth rate without the typical quality deterioration that would otherwise occur at low temperatures
3Productivity
If aspect ratio of microstructure increases, then integration density is improved, but thickness uniformity of deposition layer becomes difficult to achieve
Solution Approach 1:
The shielding compound provides locally differentiated deposition control by adsorbing selectively on different substrate surfaces. This creates spatially varying deposition conditions that compensate for the geometric challenges of high aspect ratio structures, ensuring uniform thin film thickness even in deep trenches and narrow features where conventional deposition would fail
Solution Approach 2:
The shielding compound acts as a mediator that translates the complex three-dimensional substrate geometry into controlled deposition patterns. By adsorbing on exposed substrate surfaces and preventing precursor access in a controlled manner, it enables uniform thin film formation on high aspect ratio structures that would otherwise be impossible to deposit uniformly
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of the shielding compound effectively reduces impurities, improves crystallinity, and enhances the electrical properties of thin films, while achieving better step coverage and thickness uniformity even on complex substrates.
Implementation Method 1
by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the shielding agent
Implementation Method 2
the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced
Data Source
AI summary
The present invention relates to a shielding compound, a method of forming a thin film using the shielding compound, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound having a predetermined structure as a shielding agent, by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the shielding agent, the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be greatly improved, and impurities may be reduced.