Short-Circuit Semiconductor Component for Safe Junction Destruction

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional short-circuit devices, such as thyristors, face challenges in reliably and safely short-circuiting semiconductor components without plasma explosion, ensuring long-term stability, and maintaining low blocking losses to operate without active cooling systems.

Innovation Solution

A short-circuit semiconductor component with a semiconductor body featuring a rear-side base region, an inner region of complementary conduction type, and a front-side base region, where turn-on structures are embedded and connected to electrodes, allowing for controlled irreversible destruction of semiconductor junctions to create a permanent short-circuit with reduced switching times and improved reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional thyristors are used for short-circuiting, then the short-circuit function can be achieved, but plasma explosion occurs and reliability is compromised

Engineering Contradiction:

Improveshort-circuit reliabilityVSAvoidplasma explosion

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The invention divides the semiconductor body into multiple doped regions (first doped region, second doped region, third doped region, fourth doped region) with different conduction types arranged in specific layers. This segmentation creates controlled breakdown paths that prevent uncontrolled plasma explosion while maintaining the short-circuit function.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor body are doped with different dopant types and concentrations to create localized electrical properties. The first and third doped regions have one conduction type while the second and fourth have the complementary type, creating specific breakdown characteristics in different areas that control the short-circuit process and prevent harmful plasma expansion.

Inventive Principle:

Principle #3Local quality

2Speed

If conventional short-circuit devices are used, then short-circuiting can be achieved, but switching time is too long (1 ms to 10 ms)

Engineering Contradiction:

Improveswitching speedVSAvoidswitching time

Core Design Contradiction:

SpeedVSLoss of time

Solution Approach 1:

The invention replaces mechanical spring-powered switches with a semiconductor-based device that uses electrical field control and controlled breakdown mechanisms. This substitution reduces switching time from the mechanical range of 1-10 ms to much faster electrical switching speeds, as the semiconductor structure can be activated almost instantaneously through electrical signals without mechanical movement.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Loss of energy

If conventional short-circuit devices are used, then short-circuiting can be achieved, but blocking losses are too high requiring active cooling

Engineering Contradiction:

Improveblocking lossesVSAvoidcooling system energy

Core Design Contradiction:

Loss of energyVSUse of energy by moving object

Solution Approach 1:

The invention optimizes the electrical parameters of the semiconductor structure by carefully controlling the doping concentrations and types in different regions. This parameter optimization reduces blocking losses by creating more efficient charge carrier management and lower leakage currents, allowing the device to operate without active cooling systems while maintaining low energy losses in the blocking state.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables reliable and safe short-circuiting of semiconductor components with reduced switching times, preventing plasma explosion and allowing operation without active cooling, while maintaining low electrical losses.

Implementation Method 1

the short-circuit current flowing through the thyristor causes a local overheating of the semiconductor material, which destroys the short circuit thyristor

Methodology Applied

Scientific EffectJoule heating: Joule Heating

Implementation Method 2

If a higher voltage exceeding the usual operating value by far is applied to the gate electrode, this results in a breakdown that is supposed to initiate the shorting of the IGBT

Methodology Applied

Scientific EffectElectrical breakdown:

Data Source

PatentUS11664445B2Short-circuit semiconductor component and method for operating it

Publication Date: 2023.05.30 INFINEON TECH BIPOLAR

AI summary

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.