Shrink Material for Lithography Pattern Uniformity
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Solution Overview
Problem
Current methods for shrinking hole patterns in photolithography, such as the RELACS method and those using amino-containing polymers or block copolymers, face issues like non-uniform size reduction, shape deformation, and increased dimensional variations, particularly in narrow pitch patterns and trench patterns.
Innovation Solution
A shrink material comprising a polymer with specific recurring units and an anti-vanishing solvent is applied to a resist pattern, forming a negative tone resist pattern through exposure and organic solvent development, allowing for controlled shrinkage of hole and slit sizes without pattern deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If RELACS method or amino-containing polymer is used to shrink hole pattern, then the resist pattern is thickened, but the size of holes becomes non-uniform due to non-uniform acid diffusion
Solution Approach 1:
The invention changes the chemical mechanism from acid-catalyzed crosslinking to base-catalyzed deprotection. By using a polymer with acid-labile groups and treating with a basic substance, the shrinkage is driven by base diffusion rather than acid diffusion, fundamentally altering the reaction parameters to achieve more uniform results
Solution Approach 2:
The invention replaces the acid-catalyzed crosslinking mechanism with a base-catalyzed deprotection mechanism. This substitution changes the chemical field from acidic to basic, enabling controlled shrinkage through base diffusion that produces more uniform hole size reduction
2Manufacturing precision
If block copolymer DSA is applied to shrink hole pattern, then dimensional variation is reduced, but shape deformation occurs and contradictory assembly happens for holes of different sizes
Solution Approach 1:
The invention changes the fundamental mechanism from self-assembly to base-catalyzed deprotection. By using a polymer with acid-labile groups that respond to base treatment, the system achieves controlled shrinkage without the contradictory assembly issues that plague block copolymer approaches
Solution Approach 2:
The invention introduces a basic substance as an intermediary to catalyze the deprotection reaction. This mediator enables controlled and uniform shrinkage by facilitating base diffusion through the resist pattern, avoiding the shape deformation and contradictory assembly problems of direct DSA methods
3Manufacturing precision
If shrink material is applied to achieve controlled shrinkage, then hole and slit sizes are reduced uniformly, but the process complexity increases
Solution Approach 1:
The invention merges the shrinkage function with the existing resist pattern structure. By incorporating acid-labile groups directly into the resist polymer chains, the shrinkage action is integrated into the resist material itself rather than being a separate coating process, thereby reducing overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process effectively reduces the size of holes and slits in a controlled manner, improving dimensional uniformity and edge roughness of the resist pattern, addressing the limitations of existing methods.
Implementation Method 1
wherein the basic substance is allowed to diffuse into the resist pattern
Implementation Method 2
the eliminated product causing deprotection of the acid-labile group
Data Source
Figure 1(A)~1(F)
AI summary
A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.