Si Regrowth Over Insulator for Monolithic III-N CMOS Integration
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Solution Overview
Problem
The challenge in large-scale implementation of III-N transistors lies in the absence of commercially viable low-voltage P-type metal-oxide-semiconductor (PMOS) transistors, limiting their applications and requiring separate chips for N-type metal-oxide-semiconductor (NMOS) and PMOS transistors, which increases the complexity and cost due to the need for multiple I/O pins.
Innovation Solution
The integration of Si-based semiconductor material stacks over an insulator material to form PMOS transistors on the same support structure as NMOS transistors, enabling monolithic integration of CMOS circuits with non-Si based transistors, such as III-N transistors, by semiconductor regrowth techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If III-N transistors are used for high-frequency and high-voltage applications, then device performance is improved, but the absence of commercially viable low-voltage PMOS transistors limits their application and requires separate chips for NMOS and PMOS
Solution Approach 1:
The patent combines NMOS and PMOS transistors on a single chip by integrating III-N based NMOS devices with Si-based PMOS devices. The Si-based semiconductor material stack is grown over an insulator material that is itself over the III-N semiconductor layer, allowing both transistor types to coexist on one substrate and eliminating the need for separate chips connected via I/O pins.
Solution Approach 2:
The patent introduces an insulator material layer as an intermediary between the III-N semiconductor layer and the Si-based semiconductor material stack. This insulator layer enables the integration of different semiconductor materials (III-N and Si) on the same chip while providing electrical isolation and facilitating the formation of both NMOS and PMOS transistors in close proximity.
2Ease of manufacture
If separate chips are used for NMOS and PMOS transistors, then fabrication simplicity is maintained, but the number of I/O pins increases compromising the solution viability
Solution Approach 1:
The patent merges NMOS and PMOS transistor fabrication onto a single chip by growing Si-based semiconductor material over an insulator layer that sits on the III-N semiconductor substrate. This integration allows both transistor types to share the same chip package, dramatically reducing the number of I/O pins needed for inter-chip communication while maintaining separate fabrication processes for each transistor type.
3Adaptability or versatility
If Si-based semiconductor material stack is integrated over insulator material, then monolithic integration of CMOS circuits is enabled, but fabrication process complexity increases
Solution Approach 1:
The insulator material serves as a mediator that enables the integration of Si-based semiconductor material on top of the III-N semiconductor substrate. This intermediary layer facilitates the growth of Si-based material while maintaining electrical isolation, allowing CMOS circuit integration without requiring complete process redesign, thus balancing versatility gain with manageable process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the fabrication of PMOS transistors alongside NMOS transistors on a single chip, reducing RF losses, costs, and complexity by sharing fabrication processes, and enabling more efficient high-frequency and high-voltage applications.
Implementation Method 1
The integration of Si-based semiconductor material stacks over an insulator material to form PMOS transistors on the same support structure as NMOS transistors, enabling monolithic integration of CMOS circuits with non-Si based transistors, such as III-N transistors, by semiconductor regrowth techniques.
Data Source
AI summary
Disclosed herein are IC structures, packages, and devices that include Si-based semiconductor material stack monolithically integrated on the same support structure as non-Si transistors or other non-Si-based devices. In some aspects, the Si-based semiconductor material stack may be provided by semiconductor regrowth over an insulator material. Providing a Si-based semiconductor material stack monolithically integrated on the same support structure as non-Si based devices may provide a viable approach to integrating Si-based transistors with non-Si technologies because the Si-based semiconductor material stack may serve as a foundation for forming Si-based transistors.