SiC Catalyst Decomposition via Reduced Pressure Oxidation

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Solution Overview

Problem

Current methods for recycling silicon carbide (SiC) catalyst materials, especially those containing platinum metals, face challenges such as high energy demands, laborious wet chemical processing, and the formation of passivating SiO2 layers, which hinder efficient separation of SiC from platinum metals.

Innovation Solution

A method involving the use of oxygen-containing compounds under reduced pressure to shift equilibrium reactions towards gaseous products, avoiding SiO2 formation and enabling nearly complete decomposition of SiC, with conditions controlled to maintain low oxygen partial pressures and exclusive use of oxygen from these compounds for oxidation, facilitating residue-free separation of SiC from platinum metals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If oxidizing melting is conducted at temperatures above 1,700°C to convert carbon into CO2 and melt SiO2, then SiC carrier material can be separated from noble metals, but energy consumption increases considerably

Engineering Contradiction:
Improveseparation efficiencyVSAvoidenergy consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the oxygen partial pressure parameter from atmospheric levels to reduced pressure conditions (below 100 Pa). This parameter change allows SiC decomposition to proceed at lower temperatures (1,000-1,650°C) while maintaining effective separation, avoiding the need for high-temperature melting above 1,700°C and thereby significantly reducing energy consumption.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent utilizes phase transition by controlling oxygen partial pressure to prevent SiO2 from forming a condensed glassy coating and instead maintaining it in a gaseous state or preventing its formation entirely. This allows reaction products to be removed as gases without requiring melting and eliminates the need for temperatures above the SiO2 melting point of 1,710°C.

Inventive Principle:
Principle #36Phase transitions

2Reliability

If glassy coating of SiO2 forms on SiC surface during oxidizing atmosphere treatment, then surface passivation occurs which decelerates and disrupts further reaction, but complete decomposition requires even higher temperatures

Engineering Contradiction:
Improvereaction completenessVSAvoidprocess temperature
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent creates an oxygen-deficient environment by operating under reduced pressure (below 100 Pa), which prevents oxygen from forming passivating SiO2 coatings on the SiC surface. This inert-like atmosphere allows continuous decomposition without surface passivation, achieving complete reaction at moderate temperatures of 1,000-1,650°C rather than requiring temperatures above 1,700°C.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

Solution Approach 2:

The patent applies partial oxidation by limiting oxygen availability through reduced pressure conditions. Instead of providing excess oxygen that would form passivating SiO2 coatings, the controlled oxygen-deficient environment allows gradual decomposition of SiC into volatile products without surface passivation, enabling complete decomposition at lower temperatures.

Inventive Principle:
Principle #16Partial or excessive action

3Reliability

If conventional melting processes are used for SiC catalyst materials, then noble metals can be recovered, but laborious wet chemical processing is required

Engineering Contradiction:
Improvemetal recoveryVSAvoidprocessing simplicity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent replaces mechanical and wet chemical processing steps with a thermal decomposition process under reduced pressure. Instead of conventional melting followed by complex wet chemical separation procedures, the SiC decomposes directly into volatile gaseous products (CO, SiO) that are removed by vacuum, leaving pure noble metals as residue. This substitution eliminates laborious wet chemical processing while maintaining high metal recovery.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent uses vacuum technology (reduced pressure atmosphere below 100 Pa) to facilitate the decomposition and removal of SiC decomposition products as gases. The pneumatic environment allows volatile products to be continuously removed from the reaction zone, driving the decomposition reaction forward and simplifying the overall process by eliminating the need for subsequent wet chemical separation steps.

Inventive Principle:
Principle #29Pneumatics and hydraulics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for an economical and efficient separation of SiC carrier materials from platinum metals, reducing energy consumption and avoiding the need for aggressive chemicals, while ensuring high recovery yields and minimal kinetic inhibition from reaction products.

Implementation Method 1

temperature and pressure in the reactor are adjusted such that the equilibrium partial pressure of oxygen in the reactor is lower than the partial pressure of oxygen in the oxygen-containing compound so that an equilibrium reaction of the oxygen-containing compound to the oxygen-containing compound in a lower oxidation state and oxygen is shifted towards the formation of the oxygen-containing compound in a lower oxidation state and oxygen

Methodology Applied
Scientific EffectEquilibrium reaction:

Implementation Method 2

for the oxidation of the SiC exclusively oxygen in the form of the additive is added

Methodology Applied
Scientific EffectOxidation: Oxidation

Implementation Method 3

temperature and pressure in the reactor are adjusted such that the equilibrium partial pressure of oxygen in the reactor is lower than the partial pressure of oxygen in the oxygen-containing compound

Methodology Applied
Scientific EffectReduced pressure: Vacuum

Data Source

PatentUS20240351016A1Process for decomposing sic or sic-containing materials
Publication Date: 2024.10.24 ALD VACUUM TECH GMBH
  • US20240351016A1 patent drawing
  • US20240351016A1 patent drawing

AI summary

Disclosed is a method for the decomposition of SiC or SiC-containing materials in which the reaction is guided exclusively via gaseous products for achieving a conversion which is as complete as possible. A preferred application is a recycling process for catalyst materials containing platinum metals on a carrier material made of silicon carbide (SiC). In the thermal process, the catalyst materials are freed from the carrier material, and then they can further be refined. (FIG. 1)