SiC Chip Protective Structure for Organic Film Peeling Resistance
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Solution Overview
Problem
SiC semiconductor devices face reliability issues due to peeling of the organic film in high temperature and high humidity environments, leading to variations in electrical characteristics and decreased durability.
Innovation Solution
The SiC semiconductor device incorporates a projecting structure made of inorganic substances on the outside surface, which enhances the adhesion of the organic film to the SiC chip, preventing peeling and improving reliability by eliminating nitride films that contribute to peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional multi-layer protective structure is used, then comprehensive protection is achieved, but peeling occurs in high temperature and high humidity environments
Solution Approach 1:
The patent removes the nitride film layer from the protective structure. By extracting this specific layer that causes adhesion problems in high temperature and high humidity environments, the remaining structure (oxide film + organic film) achieves better overall reliability without the peeling issue introduced by the nitride film
Solution Approach 2:
The patent uses a composite protective structure consisting of an oxide film layer and an organic film layer. This composite material approach replaces the conventional multi-layer structure including nitride film, creating a new combination that provides both protection and adhesion stability in severe environments
2Reliability
If nitride films are included in the protective layer, then comprehensive coverage is achieved, but adhesion force decreases in severe environments
Solution Approach 1:
The patent extracts and removes the nitride film component from the protective layer stack. This extraction eliminates the source of adhesion failure in high temperature and high humidity conditions, allowing the organic film to maintain stable adhesion to the substrate through the oxide film interface
Data Source
AI summary
A semiconductor device includes a chip which has a first main surface on one side and a second main surface on the other side and which includes an active surface set at an inner portion of the first main surface and an outside surface set at a peripheral edge portion of the first main surface, a functional device which is formed at the active surface side, a projecting structure which includes an inorganic substance and projects at the outside surface side, and an organic film which covers the projecting structure.