SiC Chip Trench Geometry to Suppress Bonding Material Crawling

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Solution Overview

Problem

The crawling up of bonding material on the side surfaces of silicon carbide semiconductor chips leads to decreased productivity in manufacturing processes.

Innovation Solution

Forming trenches with rounded bottoms on the semiconductor wafer and performing dicing at these positions to separate semiconductor elements, creating spaces that reduce bonding material accumulation and suppress chipping or cracking.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If dicing is performed on silicon carbide semiconductor chips, then individual devices are separated, but bonding material crawls up on the side surfaces of chips

Engineering Contradiction:

Improvechip separation efficiencyVSAvoidbonding material crawling

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent applies curvature by forming a rounded bottom portion in the trench structure. This curved geometry at the trench bottom prevents bonding material from crawling up the side surfaces of the chip during dicing, as the rounded shape redirects the bonding material flow away from the vertical sidewalls.

Inventive Principle:

Principle #14Spheroidality (Curvature)

Solution Approach 2:

The patent segments the chip structure by forming trenches that divide the semiconductor wafer into individual chip regions. The trenches with rounded bottoms create physical separation between adjacent chips while controlling bonding material behavior during the dicing process.

Inventive Principle:

Principle #1Segmentation

2Ease of manufacture

If trenches are formed in silicon carbide substrate, then device portions can be separated, but chipping or cracking occurs

Engineering Contradiction:

Improvechip separationVSAvoidchip integrity

Core Design Contradiction:

Ease of manufactureVSStrength

Solution Approach 1:

The rounded bottom portion of the trench eliminates sharp corners that would concentrate stress during dicing. This curved geometry distributes mechanical stress more evenly, preventing chipping or cracking at the trench edges while still enabling effective chip separation.

Inventive Principle:

Principle #14Spheroidality (Curvature)

Solution Approach 2:

The patent prepares the trench structure in advance with a rounded bottom shape before dicing occurs. This pre-formed curved geometry acts as a cushioning feature that absorbs and redistributes mechanical stresses during the subsequent dicing process, preventing damage to the chips.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS12581887B2Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor chip

Publication Date: 2026.03.17 MITSUBISHI ELECTRIC CORP

AI summary

Provided is a method of manufacturing a silicon carbide semiconductor device that suppresses the crawling up of a bonding material to the side surfaces of a chip, thereby suppressing a decrease in productivity. In the method of manufacturing the silicon carbide semiconductor device, the method includes, preparing a semiconductor wafer, forming semiconductor elements on the semiconductor wafer, forming a trench, which has a bottom having a roundness, on one main surface of the semiconductor wafer, and performing dicing at a position of the trench having the bottom having the roundness thereby separating the semiconductor elements into individual pieces.