SiC FET ESD Pulse Generator for Programmable High-Voltage Testing

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Solution Overview

Problem

Conventional electrostatic discharge (ESD) testing systems rely on hazardous mercury-wetted relays and semiconductor devices that are not fast enough to produce high pulse voltages, limiting their ability to generate variable and programmable ESD test pulses, and often result in leakage currents that can damage devices under test.

Innovation Solution

The use of a back-to-back connected pair of FETs, coupled with a test voltage source and opto-isolators, to produce bipolar test pulses of varying amplitudes and durations, eliminating the need for mercury-wetted relays and minimizing leakage currents, and allowing for configuration according to different ESD test models.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional mercury-wetted relays are used to produce ESD test pulses, then the required pulse voltages and shapes can be generated, but hazardous materials are used and the system becomes complex

Engineering Contradiction:
ImproveESD test pulse generation capabilityVSAvoidhazardous mercury
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the mechanical/electromagnetic relay system with a solid-state FET switching system. The FETs provide a purely electronic switching mechanism that eliminates mercury while maintaining the ability to generate high-voltage pulses through capacitor discharge through the semiconductor switches.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent extracts and removes the hazardous relay component from the ESD test system, replacing it with a solid-state FET-based switching circuit that achieves the same functional requirements without the harmful materials.

Inventive Principle:
Principle #2Taking out (Extraction)

2Device complexity

If conventional semiconductor devices are used for ESD testing, then the system is simpler, but the devices are not fast enough to produce high pulse voltages

Engineering Contradiction:
Improvesystem simplicityVSAvoidpulse generation speed
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The patent changes the key parameter of switching speed by using SiC FETs with rise times of 1-10 ns, which are significantly faster than conventional semiconductor devices. This parameter change enables the system to generate high-voltage pulses at the required speeds for ESD testing while maintaining solid-state simplicity.

Inventive Principle:
Principle #35Parameter changes

3Speed

If avalanche transistors are used to produce fast pulses, then the switching speed is sufficient, but the voltage is fixed and not programmable

Engineering Contradiction:
Improveswitching speedVSAvoidprogrammable voltage
Core Design Contradiction:
SpeedVSAdaptability or versatility

Solution Approach 1:

The patent introduces dynamic programmability by using FETs with controlled gate voltages that can be adjusted to create different discharge currents. This allows the same fast-switching architecture to produce variable pulse amplitudes and shapes by changing the gate control parameters, making the system adaptable to different ESD test models.

Inventive Principle:
Principle #15Dynamics

4Device complexity

If conventional semiconductor switches are used, then the system is simpler, but leakage currents can destroy the device under test

Engineering Contradiction:
Improvesystem simplicityVSAvoidleakage current
Core Design Contradiction:
Device complexityVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by using SiC FETs with specifically engineered low-leakage characteristics in the critical switching positions. The material selection and device design focus on minimizing leakage current at the switching junctions while maintaining the overall simplicity of the solid-state architecture.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables the production of high-voltage ESD test pulses with low aberrations, compliant with industry standards, and prevents damage to devices under test by eliminating leakage currents, while being cost-effective and adaptable to various ESD test modes.

Implementation Method 1

An ESD test capacitor is situated to be charged by the test voltage source and discharged through a device under test (DUT) and the first FET and a second FET to produce a test pulse

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

first and second opto-isolators are coupled to respective gates of the first FET and the second FET and to receive the control pulse from a pulse generator

Methodology Applied
Scientific EffectOpto-isolation: Opto-hydraulic Effect

Data Source

PatentUS11846664B2Solid state ESD SiC simulator
Publication Date: 2023.12.19 FEI CO
  • US11846664B2 patent drawing
  • US11846664B2 patent drawing
  • US11846664B2 patent drawing

AI summary

Electrostatic discharge (ESD) test systems include a FET-based pulse generator using pairs of back-to-back FETs coupled to produce an ESD pulse based on discharging a capacitor that is coupled in series with a device under test (DUT). A number of FETs can be selected based on an intended ESD test voltage magnitude.