SiC Heat Treatment Using Tungsten Resistance Heating
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional heat treatment apparatuses for SiC substrates after ion implantation face limitations in mass productivity due to restricted substrate capacity and inaccurate temperature measurement, particularly with high-frequency heating, which leads to issues with thermocouple reliability and temperature control precision during rapid temperature changes.
Innovation Solution
A heat treatment apparatus employing resistance heating with a thermocouple thermometer formed from a common main component metal, such as tungsten, enables accurate temperature control and rapid heating of multiple SiC substrates to 1600-1900°C, addressing the limitations of previous methods by ensuring precise temperature control and increased substrate capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high-frequency heating is used to achieve rapid temperature rise, then temperature control speed is improved, but mass productivity deteriorates due to restricted substrate capacity
Solution Approach 1:
The patent replaces high-frequency electromagnetic heating with resistance heating using a susceptor. This substitution allows the use of a tube-shaped susceptor that can hold multiple substrates simultaneously, resolving the contradiction between rapid heating and mass productivity by enabling both fast temperature control and increased substrate capacity
Solution Approach 2:
The tube-shaped susceptor serves multiple functions: it acts as a heating element through resistance heating, provides structural support to hold multiple substrates, and enables both rapid heating and high substrate capacity. This multi-functionality resolves the contradiction by integrating capabilities that were previously separate
2Ease of operation
If radiation thermometer is used for temperature measurement, then temperature control is enabled, but measurement precision deteriorates due to emissivity variations and surface state influence
Solution Approach 1:
The patent introduces a susceptor as an intermediary that absorbs electromagnetic energy and converts it to heat through resistance heating. This intermediary enables accurate temperature measurement by providing a stable, uniform heating source that can be precisely controlled, eliminating the measurement errors associated with direct radiation thermometer usage on substrates with varying emissivity
3Measurement precision
If thermocouple thermometer is used in high-frequency heating apparatus, then temperature measurement is enabled, but reliability deteriorates due to self-heating and induction noise
Solution Approach 1:
The patent replaces high-frequency electromagnetic heating with resistance heating using a susceptor. This substitution eliminates the harmful electromagnetic induction that causes self-heating and noise in thermocouples, while maintaining accurate temperature measurement capability, thus resolving the contradiction between measurement precision and reliability
4Ease of operation
If conventional jig structure is used to retain substrate, then substrate retention is achieved, but productivity deteriorates due to limited substrate capacity
Solution Approach 1:
The patent transitions from retaining substrates in a planar arrangement to holding them vertically within a tube-shaped susceptor. This dimensional change allows multiple substrates to be stacked and processed simultaneously, resolving the contradiction between secure substrate retention and increased processing capacity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves rapid and accurate temperature control, allowing for efficient heat treatment of numerous SiC substrates with improved mass productivity and precise temperature management, even during rapid temperature fluctuations, thereby enhancing the heat treatment process post-ion implantation.
Implementation Method 1
heating means enabling a rapid temperature rise to a temperature of 1600 through 1900° C.
Implementation Method 2
a thermometer which can measure temperatures with accuracy even when a temperature rise and a temperature drop are rapidly repeated
Data Source
AI summary
A heat treatment apparatus is provided which includes heating means for enabling a rapid temperature rise to a temperature of 1600 through 1900° C., and a thermometer capable of accurately measuring temperatures even when rapid temperature rises and drops are repeated, the heat treatment apparatus being capable of performing heat treatment of an SiC substrate with good mass productivity after ion implantation. The heat treatment apparatus enables the heat treatment of a semiconductor substrate at 1600 to 1900° C. by temperature control using a resistance heating element and thermocouple thermometers. The heat treatment apparatus is configured such that the resistance heating element and the thermocouple thermometers include a common constituent metal as a main component.