SiC Interposer Architecture for Dense Interconnects and Heat Dissipation
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Solution Overview
Problem
Existing integrated circuit technologies face challenges in achieving high interconnect density, conductivity, signal transfer speed, and effective heat dissipation, particularly in the context of silicon interposers used for interconnecting integrated circuits to substrates and circuit boards.
Innovation Solution
The use of a silicon carbide (SiC) interposer with in-situ formed carbon electrical and optical waveguide connectors, combined with laser irradiation to create complex interconnect structures and recesses for thermal coupling, enhances interconnect density and conductivity while improving heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon interposers are used for interconnecting integrated circuits, then interconnect density and conductivity are improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent employs a composite interposer structure combining silicon carbide (SiC) substrate with embedded diamond heat spreader layer. The SiC provides superior electrical conductivity and thermal stability for high-density interconnects, while the diamond layer offers exceptional thermal conductivity for heat dissipation. This composite approach resolves the contradiction by integrating materials with complementary properties - SiC for electrical performance and diamond for thermal management.
Solution Approach 2:
The patent implements localized thermal management by embedding diamond heat spreaders specifically in high-density interconnect regions where heat generation is most intense. The interposer structure features non-uniform thermal conductivity distribution - high thermal conductivity zones under hot spots and standard SiC regions elsewhere. This local quality approach allows the system to achieve high interconnect density overall while providing targeted heat dissipation capability where needed most.
2Reliability
If through silicon vias (TSV) and redistribution layers (RDL) are used for interconnection, then electrical connectivity is improved, but manufacturing complexity increases
Solution Approach 1:
The patent forms TSVs and RDL structures during the substrate fabrication process itself, before die attachment. The SiC interposer is pre-configured with embedded conductive pathways, heat spreaders, and structural features in a monolithic manufacturing process. This preliminary action eliminates the need for subsequent complex assembly steps involving separate TSV drilling, metallization, and RDL formation, thereby reducing overall manufacturing complexity while maintaining high electrical connectivity.
Solution Approach 2:
The patent merges multiple functions into the interposer substrate: structural support, electrical interconnection (TSV and RDL), thermal management (diamond heat spreaders), and mechanical attachment features. By combining these functions into a single integrated component manufactured through unified processes, the patent reduces the number of separate manufacturing steps and assembly operations required, thereby decreasing manufacturing complexity while achieving superior electrical connectivity.
3Reliability
If active components are integrated into silicon interposers, then electrical communication between integrated circuits is improved, but power consumption increases
Solution Approach 1:
The patent uses passive SiC and diamond materials as intermediaries to enable electrical communication between integrated circuits without integrating active components into the interposer. The SiC substrate provides the conductive pathway and structural platform, while the diamond layer provides thermal management. Electrical signals passively propagate through these materials from one die to another, eliminating the need for active amplification or regeneration stages within the interposer that would consume power.
Solution Approach 2:
The SiC and diamond materials inherently provide the necessary functions for electrical communication and thermal management without requiring external power input. The SiC substrate naturally conducts electrical signals between connected dies, and the diamond layer passively conducts heat away from hot spots. This self-service capability eliminates power-consuming active components while maintaining reliable electrical communication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiC interposer system achieves superior interconnect density, conductivity, and heat dissipation, supporting high-performance integrated circuits with improved signal transfer speed and thermal management.
Implementation Method 1
A plurality of interposer connectors are formed in situ within the silicon carbide (SiC) interposer
Implementation Method 2
A substrate is ablated with a first laser beam to form a void therein
Implementation Method 3
A first conductive element is formed in the void of the substrate with a second laser beam
Implementation Method 4
U.S. Pat. No. 7,268,063 to Kar, Quick and Salama discloses a process for in-situ fabricating a semiconductor in a substrate
Data Source
AI summary
An improved semiconductor IC substrate and method of making is disclosed for supporting and interconnecting integrated circuit die or multiple dies comprises a silicon carbide (SiC) interposer having a first outer surface and a second outer surface. A plurality of interposer connectors are formed in situ within the silicon carbide (SiC) interposer. A dielectric layer has a first outer surface and a second outer surface. A plurality of electrical connectors are formed within the dielectric layer. An interface is between the second outer surface of the silicon carbide (SiC) interposer and the first outer surface of the dielectric layer for electrically connecting the plurality of interposer connectors to the plurality of electrical connectors.