Silicon Carbide Film Deposition with Remote Plasma Conformality
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Solution Overview
Problem
Current PECVD processes face challenges in depositing high-quality silicon carbide thin films with excellent step coverage, low dielectric constants, high breakdown voltages, low leakage currents, and porosity over exposed metal surfaces without oxidizing the metal, due to direct plasma conditions that break undesirable bonds and lead to poor film quality and directionality.
Innovation Solution
A method and apparatus for depositing silicon carbide films using silicon-containing precursors with silicon-hydrogen and silicon-silicon bonds, where these bonds are broken to form the film while preserving silicon-oxygen and silicon-carbon bonds, using radical species in a low energy state from a remote plasma source, avoiding direct plasma exposure to maintain bond integrity and achieve conformal deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If direct plasma conditions are used in PECVD processes, then deposition can occur, but the plasma breaks undesirable bonds and leads to poor film quality and directionality
Solution Approach 1:
The plasma generation is segmented from the deposition zone. The plasma is generated in a remote source and the reactive species are transported to the substrate, separating the bond-breaking plasma generation from the film formation zone, thus preventing unwanted bond breaking during deposition
Solution Approach 2:
A remote plasma source acts as an intermediary, generating reactive species that are then transported to the substrate. This intermediary approach allows plasma activation without direct plasma exposure, preventing harmful bond breaking while maintaining deposition quality
2Manufacturing precision
If conventional PECVD is used, then silicon carbide films can be deposited, but step coverage and conformality are poor
Solution Approach 1:
The process is segmented into distinct zones: plasma generation in a remote source, species transport through a controlled environment, and deposition on the substrate. This segmentation allows for uniform species distribution and excellent step coverage without compromising the deposition mechanism
Solution Approach 2:
The energy state of reactive species is changed from high energy (direct plasma) to low energy (remote plasma), which alters the deposition mechanism to achieve conformal coverage while maintaining film quality
3Productivity
If direct plasma is applied, then deposition occurs, but metal surfaces are oxidized
Solution Approach 1:
The harmful oxidative components of the plasma are extracted or removed before the reactive species reach the metal surface. The remote plasma source generates species that are then allowed to relax, removing the high energy components that cause oxidation while retaining the reactive species needed for deposition
Solution Approach 2:
The remote plasma source serves as an intermediary that decouples the plasma generation from direct substrate exposure, preventing metal oxidation while maintaining deposition productivity through controlled species transport
4Manufacturing precision
If high energy plasma is used, then deposition can proceed, but film porosity and electrical properties deteriorate
Solution Approach 1:
The energy parameter of the plasma is changed from high energy (direct) to low energy (remote), which fundamentally alters the deposition mechanism to produce films with superior electrical properties and controlled porosity without the damaging effects of high energy plasma
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method produces silicon carbide films with high conformality, low dielectric constants, and improved electrical properties, such as high breakdown voltage and low leakage current, while maintaining porosity and preventing metal oxidation, effectively addressing the limitations of existing PECVD processes.
Implementation Method 1
The one or more radical species can be formed in a remote plasma source
Implementation Method 2
A substantially conformal layer of silicon carbide can be provided using a process employing silicon-containing precursors
Implementation Method 3
introducing from a source gas one or more radical species in a substantially low energy state to react with the silicon-containing precursor to form the silicon carbide film on the substrate under conditions that break the silicon-containing precursor's silicon-hydrogen bonds or silicon-silicon bonds but substantially preserve the silicon-containing precursor's silicon-carbon bonds
Data Source
AI summary
Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.