SiC Ring Tool Finishing for Wafer Chuck Surface Flatness

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Solution Overview

Problem

Existing deterministic techniques for finishing chuck surfaces, such as those used in semiconductor wafer handling, are inefficient due to fixed tool sizes that require extensive processing time over large substrates, especially when dealing with materials like SiC, where uniformity of lap conditions leads to non-uniformity and contamination issues.

Innovation Solution

A treatment tool with a contacting surface configured as a circle, ring, or annulus, made from silicon carbide, is used in a deterministic manner, allowing for localized correction of surface errors by moving the tool at controlled pressure over specific regions, and multiple tools can be used simultaneously with independent pressure control to cover larger areas efficiently.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a fixed-size tool is used for deterministic finishing of large chuck surfaces, then the tool can maintain consistent contact pressure, but the processing time increases significantly and contamination risk increases

Engineering Contradiction:
Improvesurface flatnessVSAvoidprocessing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent divides the chuck surface into multiple zones or segments that are processed independently. The treatment tool moves to specific locations only when correction is needed, rather than processing the entire surface uniformly. This segmentation allows targeted finishing of high-error regions while skipping already-flat areas, dramatically reducing total processing time while maintaining precision requirements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different processing parameters or intensities to different locations on the chuck surface based on local error characteristics. The treatment tool adjusts its operation locally according to the measured surface figure data, applying correction only where and how much is needed at each specific location, rather than using a uniform approach across the entire surface.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If a treatment tool processes the entire chuck surface, then uniform flatness can be achieved, but processing time increases and contamination risk increases

Engineering Contradiction:
Improvesurface uniformityVSAvoidcontamination
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent extracts or removes only the necessary processing actions from the overall process. Instead of treating the entire chuck surface, the system identifies and processes only the specific regions that require correction based on pre-measured surface figure data. This extraction of necessary-only processing minimizes the tool's contact time with the surface, reducing opportunities for contamination while achieving the required uniformity.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies partial action by processing only the portions of the surface that need correction rather than the entire surface. The deterministic approach calculates exactly which areas require material removal or adjustment, applying treatment selectively to those regions only, thereby minimizing exposure to contamination sources while achieving sufficient uniformity.

Inventive Principle:
Principle #16Partial or excessive action

3Loss of time

If a smaller treatment tool is used for localized correction, then processing time decreases, but the tool size is fixed and cannot cover larger areas efficiently

Engineering Contradiction:
Improveprocessing timeVSAvoidtool size adaptability
Core Design Contradiction:
Loss of timeVSAdaptability or versatility

Solution Approach 1:

The patent introduces dynamics to the tool system by allowing the treatment tool size or configuration to change adaptively. Rather than using a single fixed-size tool, the system can dynamically select from multiple tool sizes or configurations based on the specific requirements of different chuck surface regions. This dynamic adaptability allows efficient coverage of both small localized errors and larger area corrections without sacrificing the time-saving benefits of smaller tools.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces processing time by targeting only necessary areas for correction, improving surface flatness and reducing contamination, while maintaining precision and minimizing wear and friction, thus enhancing the lifespan and performance of chucking components.

Implementation Method 1

The treatment tool may have a contacting surface configured such that when this contacting or treatment surface is brought into contact with a flat surface, for example, of that of a wafer chuck, the area of contact may be in the form of a circle, ring, or annulus

Methodology Applied
Scientific EffectAbrasion: Abrasion

Data Source

PatentUS10953513B2Method for deterministic finishing of a chuck surface
Publication Date: 2021.03.23 II VI DELAWARE INC
  • US10953513B2 patent drawing
  • US10953513B2 patent drawing
  • US10953513B2 patent drawing

AI summary

In a deterministic setting for finishing the support surface of a chuck such as a wafer chuck, the treatment tool may have a contacting surface shaped as a ring, annulus, or toroid, or at least such will be the form of contact when the treatment tool is brought into contact with a flat surface. The treatment tool may have about the same hardness as the work piece (e.g., the wafer chuck) that is being finished. In one embodiment, the treatment tool, or at least the flat contacting surface, is made from silicon carbide (SiC), or contains SiC, for example, in the form of a composite material such as reaction-bonded SiC.