Sidewall Phase Change Memory for Fast Read/Write Speed
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Solution Overview
Problem
Conventional phase change memory technologies suffer from slow read/write speed and low efficiency due to a large contact area between the phase change layer and the heating layer, leading to prolonged phase change times.
Innovation Solution
A phase change memory fabrication method where a phase change layer is formed on the sidewall surface of a heating layer with a small thickness, reducing the contact area and only the sidewall of the heating layer is in contact with the phase change layer, thereby minimizing the material undergoing phase change during read/write operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the phase change layer is formed with a large contact area with the heating layer, then the heating effect is sufficient, but the phase change time is prolonged and read/write speed is slow
Solution Approach 1:
The patent transitions from a planar contact configuration to a three-dimensional vertical contact configuration by forming the phase change layer on the sidewall surface of the heating layer. This dimensional change reduces the contact area while maintaining effective thermal coupling, thereby shortening phase change time and improving read/write speed without sacrificing heating efficiency
Solution Approach 2:
The patent applies local quality by concentrating the phase change material only where needed - on the sidewall surface of the heating layer - rather than using a large planar contact area. This localized placement of the phase change layer minimizes the amount of material that needs to undergo phase change, reducing the overall phase change time while maintaining sufficient heating effect at the critical interface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly shortens the phase change time, enhancing the read/write speed of the phase change memory by reducing the contact area between the phase change layer and the heating layer.
Implementation Method 1
The phase change layer is made of a small chalcogenide alloy, which, through central heating by an electrical pulse, can switch quickly from an ordered crystalline state to a disordered amorphous state
Implementation Method 2
The repetitive conversion of the phase change layer of a phase change memory from the crystalline state to the amorphous state is triggered by a melting and rapid cooling mechanism
Data Source
AI summary
A phase change memory and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a heating layer on the substrate; forming a phase change layer on and in contact with one sidewall surface of the heating layer. The phase change memory includes: a substrate; a heating layer on the substrate; and a phase change layer on and in contact with one sidewall surface of the heating layer.