Bulk Negative Resistance Effect Devices TRIZ Cases
- Mixed-Material PCM Cell Structure for Low Reset Current
Alternating phase-change and non-phase-change layers cut thermal conductance, lowering reset current while preserving endurance and resistance stability.
- Oxide Valence-Layered Resistive Memory for Low-Voltage Switching
Different-valence oxide layers create oxygen-vacancy filaments that widen resistance range and enable low-voltage memory switching.
- Stacked Variable-Resistance Memory for Leakage-Safe Programming
Amorphous variable-resistance layers enable selective programming in stacked memory while suppressing leakage current in unselected cells.