SiGe Photoelectric Detector with On-Chip Mode Converter
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Solution Overview
Problem
Silicon-germanium photoelectric detectors experience absorption losses and reduced responsiveness due to the absorption of optical fields by heavily germanium-doped regions and through-holes, which degrades their performance in optical communication systems.
Innovation Solution
The silicon-germanium photoelectric detection apparatus incorporates an on-chip mode converter with heavily germanium-doped regions positioned in areas of relatively weak light intensity within the multi-mode optical field, reducing absorption losses and enhancing responsiveness by strategically placing these regions and through-holes to minimize interference with the optical signal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If heavily germanium-doped regions are used in silicon-germanium photoelectric detectors, then the detection capability is improved, but absorption losses increase and responsiveness deteriorates
Solution Approach 1:
The patent applies local quality by positioning heavily germanium-doped regions specifically at the edges and corners of the germanium absorption waveguide, rather than uniformly distributing them. This localized placement ensures that the doped regions are situated in areas where the optical field intensity is naturally weaker, thereby maintaining detection capability while minimizing absorption losses in the optical path.
Solution Approach 2:
The patent transitions from considering only the horizontal cross-section to incorporating the vertical dimension by placing heavily germanium-doped regions at the edges and corners of the waveguide structure. This multi-dimensional approach allows the doped regions to be positioned in spatial locations with weaker optical field intensity, effectively reducing their impact on optical absorption while maintaining electrical detection functionality.
2Reliability
If heavily germanium-doped regions are positioned in the germanium absorption waveguide, then photoelectric conversion is enhanced, but optical field absorption by doped regions and through-holes increases
Solution Approach 1:
The patent applies local quality by positioning heavily germanium-doped regions specifically at the edges and corners of the germanium absorption waveguide, rather than uniformly distributing them. This localized placement ensures that the doped regions are situated in areas where the optical field intensity is naturally weaker, thereby maintaining detection capability while minimizing absorption losses in the optical path.
Solution Approach 2:
The patent converts the potentially harmful effect of optical absorption by heavily germanium-doped regions into a beneficial arrangement by strategically positioning these regions at waveguide edges and corners. In these locations, the optical field intensity is inherently weaker, so the absorption caused by the doped regions becomes negligible. This transforms what would normally be a harmful effect into an acceptable or even beneficial structural feature.
3Reliability
If through-holes are formed for electrode connection, then electrical connectivity is achieved, but additional optical absorption losses occur
Solution Approach 1:
The patent applies local quality by positioning heavily germanium-doped regions specifically at the edges and corners of the germanium absorption waveguide, rather than uniformly distributing them. This localized placement ensures that the doped regions are situated in areas where the optical field intensity is naturally weaker, thereby maintaining detection capability while minimizing absorption losses in the optical path.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces absorption losses and improves the responsiveness of the silicon-germanium photoelectric detection apparatus by placing heavily germanium-doped regions in areas with weak light intensity, leading to enhanced performance in optical communication systems.
Implementation Method 1
the on-chip mode converter converts the fundamental mode optical signal into a multi-mode optical field
Implementation Method 2
the multi-mode optical field enters the multi-mode silicon-germanium photoelectric detector, which then converts the multi-mode optical field into an electrical signal
Implementation Method 3
in addition to being absorbed by germanium to generate an electrical signal
Data Source
AI summary
An on-chip mode converter-based silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode converter and a multi-mode silicon-germanium photoelectric detector. The optical coupler, the converter and the photoelectric detector are sequentially connected and all fixed on silicon wafers of the insulating substrate. An incident fundamental mode optical signal is transmitted to the optical coupler through a single-mode fiber, enters the converter via the optical coupled. The converter converts the fundamental mode optical signal into a multi-mode optical field and enters the photoelectric detector, which converts the multi-mode optical field into an electrical signal. Heavily germanium-doped region are located in areas with relatively weak distributed light intensity of the multi-mode optical field. The absorption loss of the heavily germanium-doped region and third through-holes on the optical field is dramatically reduced and the responsiveness of the apparatus can be improved effectively.