Silicide Contact Structure for Thermally Stable CMOS Transistors
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Solution Overview
Problem
The thermal stability of transistor structures in semiconductor devices is a challenge, particularly in high-temperature processing conditions, where source/drain contacts made from different materials or microstructures react differently, affecting performance and robustness.
Innovation Solution
The use of different silicide interface contacts tailored for p-type and n-type source/drain regions, with some contacts being partially embedded and others self-aligned, along with varying liners and dislocation stress memorization techniques, to enhance conductivity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different silicide interface contacts are used for p-type and n-type source/drain regions, then thermal stability and conductivity are improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by using different silicide interface contact materials for p-type and n-type source/drain regions. Specifically, first silicide interface contacts (e.g., cobalt silicide) are formed on n-type regions while second silicide interface contacts (e.g., nickel silicide) are formed on p-type regions. This localized differentiation optimizes thermal stability and conductivity for each transistor type without requiring complete redesign of the entire device structure.
Solution Approach 2:
The invention segments the contact structure into distinct components: separate silicide interface contacts for p-type and n-type regions, different liner materials, and differentiated microstructures (partially embedded vs. self-aligned). This segmentation allows independent optimization of each contact type's thermal and electrical properties while maintaining overall device functionality.
2Reliability
If different silicide interface contacts with varying microstructures are used, then conductivity is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs parameter changes by varying multiple characteristics of the silicide interface contacts: material composition (cobalt silicide vs. nickel silicide), microstructure (partially embedded vs. self-aligned), and liner materials. These parameter variations are strategically applied to optimize conductivity while the patent also provides manufacturing guidance for controlling the resulting precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves transistor performance and stability at higher temperatures by optimizing the interaction between silicide interface contacts and channel types, leading to enhanced conductivity and robustness in semiconductor devices.
Implementation Method 1
first silicide interface contacts on the n-type source/drain regions, and second silicide interface contacts on the p-type source/drain regions different from the first silicide interface contacts
Data Source
AI summary
Apparatus and methods are disclosed, including transistors, semiconductor devices and systems. Example semiconductor devices and methods include silicide contacts on source/drain regions in different conductivity type transistors. In one example, silicide contacts are different between transistors of different conductivity types.