Silicided Deep Trench Decoupling Capacitor Parasitic Resistance
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Solution Overview
Problem
Deep trench capacitors in semiconductor structures suffer from parasitic resistance issues that adversely affect the semiconductor structure, which existing technologies have not adequately addressed.
Innovation Solution
A semiconductor structure and method involving a trench capacitor with a dielectric liner layer, a doped polysilicon layer, and a silicide layer, where the silicide layer separates the contact from the doped polysilicon layer, and a contact is formed with a lower surface not abutting the silicide layer, reducing parasitic resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a deep trench capacitor structure is used for decoupling, then electrical noise diversion capability is improved, but parasitic resistance increases adversely affecting the semiconductor structure
Solution Approach 1:
The capacitor structure is divided into multiple functional segments: a first conductive layer forming the bottom electrode, a dielectric layer, and a second conductive layer forming the top electrode. This segmentation allows optimization of each layer's properties to reduce parasitic resistance while maintaining noise diversion capability.
Solution Approach 2:
The patent employs composite material structures including silicide layers combined with conductive layers, and multi-layer dielectric compositions. These composite materials provide both low resistance pathways and effective electrical isolation, reducing parasitic resistance while maintaining the decoupling function.
2Ease of manufacture
If existing trench capacitor structures are used, then manufacturing simplicity is maintained, but parasitic resistance issues are not adequately addressed
Solution Approach 1:
Silicide layers are formed on the conductive layers before final contact formation. This preliminary silicide formation reduces contact resistance in advance, ensuring low parasitic resistance is achieved before subsequent manufacturing steps without adding significant process complexity.
3Device complexity
If the contact directly contacts the doped polysilicon layer, then manufacturing steps are reduced, but parasitic resistance increases
Solution Approach 1:
A silicide layer is introduced as an intermediary between the contact and the doped polysilicon layer. This silicide layer provides a low-resistance pathway for current flow, reducing parasitic resistance while the contact structure maintains manageable complexity through standardized contact formation processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces parasitic resistance in deep trench capacitors, improving the performance of decoupling capacitors and minimizing adverse effects on the semiconductor structure.
Implementation Method 1
a silicide layer over a portion of the doped polysilicon layer, the silicide layer separating at least a portion of the contact from at least a portion of the doped polysilicon layer
Implementation Method 2
a doped polysilicon layer over the dielectric liner layer, the doped polysilicon layer forming an inner trench within the outer trench
Data Source
AI summary
Solutions for forming a silicided deep trench decoupling capacitor are disclosed. In one aspect, a method of forming a semiconductor device includes: forming an outer trench in a silicon substrate, the forming exposing portions of the silicon substrate below an upper surface of the silicon substrate; depositing a dielectric liner layer inside the trench; depositing a doped polysilicon layer over the dielectric liner layer, the doped polysilicon layer forming an inner trench in the silicon substrate; forming a silicide layer over a portion of the doped polysilicon layer; forming an intermediate contact layer within the inner trench; and forming a contact over a portion of the intermediate contact layer and a portion of the silicide layer.