Silicide-Sandwiched Source/Drain for Thermal Proximity
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively and efficiently heating and temperature sensing due to thermistors being too thermally distant from the active transistors, leading to inefficient heating and inaccurate temperature sensing.
Innovation Solution
The use of silicide-sandwiched source/drain regions, which are thermally proximal to the active transistors, functions as both a heater and a temperature sensor, providing improved thermal proximity for efficient heating and accurate temperature sensing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional thermistors are used for heating and temperature sensing, then the device structure is simple, but the thermal proximity to active transistors is insufficient leading to inefficient heating and inaccurate temperature sensing
Solution Approach 1:
The silicide-sandwiched source/drain region is designed to perform multiple functions simultaneously: it serves as both the heater element and the temperature sensor through its inherent thermal and electrical properties. This eliminates the need for separate thermistor components while achieving both heating and accurate temperature sensing functions
Solution Approach 2:
The invention merges the heater and temperature sensor functions into the existing silicide-sandwiched source/drain region structure. By utilizing the silicide layers' thermal conductivity and resistance properties, the structure combines heating capability with temperature sensing capability in a single integrated component, improving thermal proximity to active transistors
2Use of energy by moving object
If thermistors are positioned away from active transistors, then the device layout is easier, but the thermal efficiency of heating is reduced
Solution Approach 1:
The silicide-sandwiched source/drain region is positioned locally adjacent to the active transistor channel, creating a localized thermal interaction zone. This local positioning ensures efficient heat transfer from the heater to the transistor while maintaining the structural integrity and ease of standard semiconductor layout processes
3Measurement precision
If thermistors are positioned away from active transistors, then the device layout is easier, but the temperature sensing accuracy is reduced
Solution Approach 1:
The silicide-sandwiched source/drain region is positioned locally adjacent to the active transistor channel, creating a localized thermal interaction zone. This local positioning ensures efficient heat transfer from the heater to the transistor while maintaining the structural integrity and ease of standard semiconductor layout processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicide-sandwiched source/drain regions effectively heat the active transistors and accurately sense their temperature, offering enhanced thermal efficiency and accuracy compared to traditional approaches.
Implementation Method 1
The silicide-sandwiched source/drain regions effectively heat the active transistors
Implementation Method 2
The silicide-sandwiched source/drain regions are thermally proximal to the active transistors, providing improved thermal proximity for efficient heating and accurate temperature sensing
Data Source
AI summary
A semiconductor device including: a first S/D arrangement including a silicide-sandwiched portion of a corresponding active region having a silicide-sandwiched configuration, a first portion of a corresponding metal-to-drain/source (MD) contact structure, a first via-to-MD (VD) structure, and a first buried via-to-source/drain (BVD) structure; a gate structure over a channel portion of the corresponding active region; and a second S/D arrangement including a first doped portion of the corresponding active region; and at least one of the following: an upper contact arrangement including a first silicide layer over the first doped portion, a second portion of the corresponding MD contact structure; and a second VD structure; or a lower contact arrangement including a second silicide layer under the first doped portion, and a second BVD structure.