Silicon Aging Monitoring in Multi-Core Processors

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Solution Overview

Problem

Current methods for estimating the aging of silicon in integrated circuit devices assume a static 'worst case' scenario, leading to conservative operational parameters and premature discarding of devices, as they fail to account for real-time variations in voltage, frequency, and temperature.

Innovation Solution

A method that monitors and manages the aging of silicon in integrated circuit devices by using real-time operational parameters to compute modeled ages of multi-core processors, allowing for more aggressive operational settings and timely replacement indications based on predefined thresholds.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If static worst case scenarios are used for aging estimation, then reliability is improved, but device complexity and energy efficiency deteriorate

Engineering Contradiction:
ImprovereliabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from static worst-case aging estimation to dynamic real-time aging monitoring. The system continuously collects operational data (voltage, frequency, temperature) and updates aging models dynamically, allowing the device to adapt its operational parameters based on actual aging state rather than relying on conservative static assumptions.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements feedback mechanisms where real-time operational data is fed back into aging models to continuously refine aging estimates. This closed-loop approach allows the system to adjust operational parameters based on actual aging progression, replacing static worst-case assumptions with dynamic feedback-driven decisions.

Inventive Principle:
Principle #23Feedback

2Reliability

If static worst case scenarios are used for aging estimation, then reliability is improved, but energy efficiency deteriorates

Engineering Contradiction:
ImprovereliabilityVSAvoidenergy efficiency
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The system dynamically adjusts operational parameters such as voltage and frequency based on real-time aging estimates rather than using fixed conservative values. This allows the device to operate at higher performance levels when aging is low and reduce power consumption when aging approaches thresholds, optimizing energy efficiency across the device lifecycle.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes operational parameters (voltage, frequency, cooling requirements) based on real-time aging state. By continuously updating these parameters rather than maintaining static conservative settings, the system achieves better energy efficiency while maintaining reliability through data-driven decisions.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If real-time monitoring of operational parameters is implemented, then accuracy of aging estimation is improved, but device complexity increases

Engineering Contradiction:
Improveaccuracy of aging estimationVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent leverages existing operational data collection infrastructure for multiple purposes: monitoring voltage, frequency, and temperature for real-time aging estimation. By making the existing monitoring system multi-functional rather than adding dedicated aging sensors, the system achieves high measurement precision without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9310424B2Monitoring aging of silicon in an integrated circuit device
Publication Date: 2016.04.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9310424B2 patent drawing
  • US9310424B2 patent drawing
  • US9310424B2 patent drawing

AI summary

A mechanism is provided for determining a modeled age of a mufti-core processor. For each core in a set of cores in the multi-core processor, a determination is made of a temperature, a voltage, and a frequency at regular intervals for a set of degradations and a set of voltage domains, thereby forming the modeled age of the multi-core processor. A determination is made as to whether the modeled age of the multi-core processor is greater than an end-of-life value. Responsive to the modeled age of the multi-core processor being greater than an end-of-life value, an indication is sent that the multi-core processor requires replacement.