Silicon-Modified CMP Slurry for Fast Copper Polishing
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Solution Overview
Problem
Current chemical mechanical polishing (CMP) slurry compositions for copper films face challenges in achieving a high polishing rate while minimizing dishing and corrosion, often requiring high amounts of complexing agents and corrosion inhibitors that can lead to increased corrosiveness and solubility limitations.
Innovation Solution
A CMP slurry composition incorporating polishing particles modified with a silicon-containing compound, represented by Formula 1, which includes a solvent and silica particles, helps improve polishing efficiency by reducing friction and suppressing dishing, with a pH range of 5 to 9, and optionally includes a complexing agent, corrosion inhibitor, and oxidizing agent to control corrosion and enhance polishing selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high amounts of complexing agents and corrosion inhibitors are used to achieve high polishing rate, then polishing efficiency is improved, but corrosiveness increases and solubility limitations occur
Solution Approach 1:
The patent introduces a silicon-containing compound as an intermediary substance that modifies the interaction between polishing particles and copper films. This compound acts as a mediator that enables effective copper ion removal and suppression of dishing without requiring excessive amounts of complexing agents and corrosion inhibitors, thereby reducing overall corrosiveness while maintaining polishing efficiency
Solution Approach 2:
The patent changes the chemical parameters of the polishing system by incorporating a silicon-containing compound with specific molecular structure (Formula 1). This parameter change allows the system to achieve high polishing rates with reduced corrosiveness, as the silicon-containing compound provides alternative mechanisms for copper ion chelation and surface protection that are more efficient than traditional complexing agents
2Productivity
If high amounts of complexing agents and corrosion inhibitors are used to achieve high polishing rate, then polishing efficiency is improved, but solubility limitations occur
Solution Approach 1:
The silicon-containing compound serves as an intermediary that provides alternative solubility pathways. Its molecular structure includes hydrophilic groups that enhance solubility in the polishing slurry, allowing the system to maintain high concentrations of active polishing components without precipitating out, thus overcoming solubility limitations while achieving high polishing rates
3Productivity
If conventional polishing particles are used to achieve high polishing rate, then productivity is improved, but dishing and scratches increase
Solution Approach 1:
The patent creates a composite polishing system by combining conventional polishing particles with a silicon-containing compound. This composite approach modifies the surface properties of the polishing particles, making them softer and more compliant, which reduces dishing and scratches while maintaining high polishing rates through the synergistic effect of the silicon-containing compound's copper ion chelation capabilities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CMP slurry composition effectively increases the polishing rate of copper films while reducing dishing and corrosion, improving flatness and storage stability, and reducing the need for high amounts of complexing agents and corrosion inhibitors, thus enhancing semiconductor processing efficiency.
Implementation Method 1
nitrogen chelation of copper ions
Implementation Method 2
reducing friction
Implementation Method 3
stabilizing dispersion
Implementation Method 4
an oxidizing agent, to oxidize the copper film
Data Source
AI summary
A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,