Silicon-Containing Film Composition for Semiconductor Patterning

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Solution Overview

Problem

In the multilayer resist process for semiconductor manufacturing, silicon-containing films used as intermediate layers face challenges such as reflection issues during photolithography, poor shelf stability due to condensation of silanol groups, and inadequate dry etching resistance, which affect pattern formation and resolution.

Innovation Solution

A heat-curable silicon-containing film-forming composition is developed, comprising a silicon compound obtained through hydrolytic condensation with an acid catalyst, a compound with a specific formula to control pH, a mono or polyhydric alcohol substituted with a cyclic ether as a stabilizer, and an organic solvent, which inhibits condensation reactions and enhances shelf stability and dry etching properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a silicon-containing film is used as an intermediate layer in multilayer resist process, then etching selectivity between resist and substrate is improved, but reflection issues during photolithography occur

Engineering Contradiction:
Improveetching selectivityVSAvoidreflection during photolithography
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent employs a composite material system consisting of a silicon-containing film combined with an organic antireflective coating layer. The silicon-containing film provides the necessary etching selectivity as an intermediate layer, while the organic antireflective coating (comprising compounds with aromatic rings and specific functional groups) suppresses reflection during photolithography. This composite structure resolves the contradiction by allowing each layer to fulfill its specific function without interfering with the other's performance.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If silicon-containing film is formed by spin coating, then manufacturing simplicity is improved, but shelf stability deteriorates due to condensation of silanol groups

Engineering Contradiction:
Improvespin coating processabilityVSAvoidshelf stability
Core Design Contradiction:
Ease of manufactureVSStability of the object's composition

Solution Approach 1:

The patent applies preliminary action by incorporating stabilizers into the silicon-containing film composition before the condensation reaction occurs. The stabilizers (such as silane compounds with specific functional groups) are pre-added to the sol-gel formulation to prevent unwanted condensation of silanol groups during storage. This preliminary stabilization allows the composition to maintain its intended properties on the shelf while still being processable by spin coating, resolving the contradiction between ease of manufacture and shelf stability.

Inventive Principle:
Principle #10Preliminary action

3Manufacturing precision

If photoresist coating thickness is reduced to achieve finer feature size, then resolution performance is improved, but aspect ratio of resist pattern becomes too high causing pattern collapse

Engineering Contradiction:
Improvefeature size resolutionVSAvoidaspect ratio of resist pattern
Core Design Contradiction:
Manufacturing precisionVSShape

Solution Approach 1:

The patent resolves this contradiction by introducing an intermediate dimension - the silicon-containing film layer - between the photoresist and the substrate. This intermediate layer acts as a mechanical support that reduces the effective aspect ratio of the resist pattern. The silicon-containing film provides structural reinforcement that prevents pattern collapse, allowing the use of thinner photoresist coatings for high-resolution patterning without suffering from excessive aspect ratio problems.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Length of moving object

If thinner photoresist coating is used for miniaturization, then feature size is reduced, but etching resistance of resist film deteriorates

Engineering Contradiction:
Improvepattern widthVSAvoidetching resistance
Core Design Contradiction:
Length of moving objectVSStrength

Solution Approach 1:

The patent introduces the silicon-containing film as an intermediary layer between the thin photoresist and the substrate. This intermediary layer assumes the primary etching resistance function, allowing the photoresist to be made thinner for miniaturization purposes. The silicon-containing film, with its inherent resistance to dry etching processes, protects the thin resist pattern during substrate processing, thereby enabling reduced pattern width without sacrificing etching resistance.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition provides a silicon-containing film that effectively reduces reflection, maintains stability over time, and offers high etching selectivity, enabling accurate pattern formation and processing in semiconductor manufacturing.

Implementation Method 1

a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst

Methodology Applied
Scientific EffectHydrolytic condensation: Hydrolysis

Implementation Method 2

the silicon-containing film has a light-absorbing capability to allow for pattern formation even under high-NA exposure conditions

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Implementation Method 3

a mono or polyhydric alcohol substituted with a cyclic ether... which inhibits condensation reactions and enhances shelf stability

Methodology Applied
Scientific EffectCondensation inhibition: Condensation

Data Source

PatentUS8652750B2Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
Publication Date: 2014.02.18 SHIN ETSU CHEMICAL CO LTD
  • US8652750B2 patent drawing
  • US8652750B2 patent drawing
  • US8652750B2 patent drawing

AI summary

A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.