Silicon Hydride Oxide Solvent Coating Process

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Solution Overview

Problem

Conventional methods for forming silicon oxide films on substrates require non-oxidizing atmospheres and heat treatment, which can damage less heat-resistant substrates and result in low oxidation purity, limiting the use of substrates like plastic and reducing the effectiveness of the oxide coating.

Innovation Solution

A method involving the production of a silicon hydride oxide-containing organic solvent by blowing an oxygen-containing gas on an organic solvent containing silicon hydride or its polymer, allowing the oxide to form before coating and eliminating the need for non-oxidizing atmospheres and heat treatment, thereby enabling the formation of a stable oxide coating film on a wide range of substrates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If oxidation by heating is performed on the substrate in the atmosphere, then a silicon oxide film can be formed on the substrate, but damages to the substrate caused by the heating are considerable and substrates that can be used are limited to highly heat-resistant substrates

Engineering Contradiction:
Improveoxidation purityVSAvoidsubstrate damage from heating
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by performing the oxidation of silicon hydride to form silicon oxide directly in the coating solution before application to the substrate. This pre-oxidation step eliminates the need for subsequent high-temperature heating treatment on the substrate, thereby preventing substrate damage while still achieving complete oxidation and high purity silicon oxide film formation.

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If a silane compound in solution is oxidized on a substrate, then a silicon oxide film can be formed, but the attainable oxidation purity is low because it is difficult to oxidize the silane compound sufficiently

Engineering Contradiction:
Improvecoating process simplicityVSAvoidoxidation purity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by modifying the chemical composition of the coating solution to include silicon hydride and an oxidizing agent together, creating a chemically active coating solution that undergoes oxidation reaction upon contact with the substrate or during drying. This chemical parameter change ensures complete oxidation to achieve high purity silicon oxide film while maintaining the simplicity of the coating process.

Inventive Principle:
Principle #35Parameter changes

3Ease of operation

If non-oxidizing atmosphere is used during coating, then the coating process can be performed, but strict atmospheric conditions are required and the process becomes complex

Engineering Contradiction:
Improvecoating process easeVSAvoidatmosphere control system
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent applies inversion by reversing the conventional approach: instead of protecting the silane compound from oxidation during coating and then oxidizing it later on the substrate, the invention directly uses an oxidizing atmosphere during coating and allows the silicon hydride to be oxidized in the coating solution itself. This eliminates the need for complex non-oxidizing atmosphere control while achieving complete oxidation and high purity silicon oxide film formation.

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method allows for the efficient formation of a silicon hydride oxide coating film on substrates without the need for non-oxidizing atmospheres or heat treatment, enabling the use of less heat-resistant materials like plastic and achieving high oxidation purity, making it suitable for electrical insulating applications.

Implementation Method 1

blowing an oxygen-containing gas on an organic solvent containing a silicon hydride or a polymer thereof

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS10414661B2Method of producing silicon hydride oxide-containing solvent
Publication Date: 2019.09.17 ENSURGE MICROPOWER ASA
  • US10414661B2 patent drawing
  • US10414661B2 patent drawing
  • US10414661B2 patent drawing

AI summary

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.