Silicon Oxide Planarization via Fluorine Ion Chemical Dissolution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for planarizing silicon oxide films in semiconductor manufacturing, such as Chemical Mechanical Polishing (CMP), often result in mechanical damage due to abrasive grains, and there is a lack of effective methods for planarizing silicon oxide films essential for semiconductor device production.
Innovation Solution
A planarization method and apparatus that uses a process liquid containing fluorine ions and a solid plate with adsorbed hydrogen ions to chemically dissolve the silicon oxide film, eliminating the need for mechanical polishing and thereby preventing abrasion damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If Chemical Mechanical Polishing (CMP) method is used to planarize silicon oxide films, then planarization can be achieved, but mechanical damage and abrasion damage occur on the work surface due to abrasive grains
Solution Approach 1:
The patent replaces the mechanical polishing action with a chemical dissolution process. A solid plate with catalyst particles is used to generate localized chemical reactions that dissolve the silicon oxide film without mechanical contact, thereby eliminating abrasion damage while achieving planarization.
Solution Approach 2:
The patent introduces a solid plate with catalyst particles as an intermediary between the workpiece and the process liquid. The catalyst particles on the solid plate surface facilitate chemical reactions with the silicon oxide film, enabling planarization through chemical action rather than direct mechanical polishing.
2Object-affected harmful factors
If a process liquid without abrasive grains is used to avoid abrasion damage, then abrasion damage is reduced, but there is no effective method proposed for planarizing silicon oxide films
Solution Approach 1:
The patent changes the chemical parameters of the process liquid by adding specific chemicals that react with the silicon oxide film. The process liquid contains substances that dissolve silicon oxide through chemical reactions, enabling effective planarization without abrasive grains.
Solution Approach 2:
The patent uses a composite system consisting of a solid plate with catalyst particles and a specially formulated process liquid. The catalyst particles on the solid plate surface work synergistically with the process liquid to achieve chemical dissolution of the silicon oxide film, providing an effective planarization method without abrasives.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively planarizes silicon oxide films using a chemical reaction without mechanical polishing, suppressing abrasion damage and ensuring precise surface planarization, which is essential for semiconductor device manufacturing.
Implementation Method 1
the work surface of the work piece is planarized by bringing the work surface of the work piece which contains a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate
Data Source
AI summary
According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.