Silicon Component Reshaping by Oxide Growth in Recesses
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Solution Overview
Problem
Current manufacturing processes for silicon components in watchmaking do not allow for increasing the dimensions of a component after it has been manufactured, particularly in cases where lengthening or bending is required.
Innovation Solution
A method involving the formation of recesses in a silicon body followed by the growth of silicon oxide (SiO2) within these recesses to deform and modify the dimensions, utilizing thermal oxidation between 800 and 1200 °C under an oxidizing atmosphere.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching techniques (laser, plasma, DRIE, wet etching) are used to manufacture silicon components, then precise dimensions and physical characteristics are achieved, but the dimensions cannot be modified after manufacturing
Solution Approach 1:
The invention introduces recesses during the initial manufacturing process as preparation for future dimension modification. These pre-formed cavities allow controlled silicon oxide growth that will deform the component to desired dimensions later, enabling post-manufacturing adaptation while maintaining initial manufacturing precision.
Solution Approach 2:
The invention changes the physical-chemical state of the silicon component by growing silicon oxide within the recesses. This material transformation causes controlled deformation and volume increase, modifying the component's dimensions after manufacturing while preserving the precision achieved during initial fabrication.
2Adaptability or versatility
If silicon oxide is grown inside recesses to fill and deform the body, then the dimensions of the component can be increased (lengthening, bending), but the process requires additional manufacturing steps
Solution Approach 1:
The invention merges the dimension modification function with the existing silicon manufacturing process by integrating recess formation into the initial fabrication. This combination approach adds the necessary oxidation step while leveraging existing manufacturing infrastructure, reducing overall process complexity compared to separate modification operations.
Solution Approach 2:
The recesses act as intermediaries that facilitate dimension modification. By providing controlled cavities within the silicon body, the recesses enable localized silicon oxide growth that deforms the component to desired dimensions without requiring complex external manipulation or assembly processes.
3Manufacturing precision
If recesses are hollowed out after body formation using laser or DRIE, then precise control of recess geometry is achieved, but additional processing time is required
Solution Approach 1:
The recesses are formed during the initial body formation process rather than as a separate subsequent operation. This preliminary integration of recess creation with body manufacturing eliminates redundant processing steps and reduces total manufacturing time while maintaining precise recess geometry through controlled etching parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the modification of silicon component geometry post-manufacture by lengthening or bending, facilitating design and assembly-free production of monolithic components.
Implementation Method 1
the growth of silicon oxide fills the voids, but it also transforms the silicon on which it grows. This silicon is transformed into silicon oxide, which has the characteristic of having a larger volume than silicon
Implementation Method 2
the silicon oxide growth step is produced by thermal oxidation, preferably carried out between 800 and 1200 °C under an oxidizing atmosphere using water vapor or dioxygen gas
Data Source
Figure 1a~2b
AI summary
The invention relates to a method for modifying the dimensions of a body (1, 5), particularly for watchmaking, the method comprising a first step of forming the body (1, 5) in an initial material (2) comprising silicon, preferably entirely, the body (1, 5) comprising recesses (3, 6) extending from the surface towards the interior of the body (1, 5), characterized in that it comprises a second step of growing silicon oxide of the SiO2 type inside said recesses (3, 6), so as to fill the recesses and deform the body (1, 5) in order to modify its dimensions.