Silicon Precursor Composition for Chlorine-Free ALD Dielectric Films
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Solution Overview
Problem
The challenge in ultra-miniaturization of integrated circuit devices is forming silicon-containing films with uniform thickness and excellent electrical properties, particularly due to issues with chlorine inclusion leading to high degradation potential of time-dependent dielectric film breakdown properties.
Innovation Solution
A silicon compound represented by Chemical Formula R1 m (OR2) n (OR3) 3-m-n Si-O-SiR4 p (OR5) q (OR6) 3-p-q is used, where m, n, p, and q are integers from 0 to 3, and R1, R4 are heterocyclic or carbon groups, R2, R3, R5, R6 are hydrogen or alkyl groups, to form a silicon-containing film through atomic layer deposition, avoiding chlorine inclusion and providing high thermal stability and reactivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon-containing films are used in ultra-miniaturized devices, then device integration is achieved, but chlorine inclusion causes high degradation potential of time-dependent dielectric film breakdown properties
Solution Approach 1:
The patent extracts and eliminates chlorine from the silicon-containing film composition by using alternative precursors (silane, methylsilane, ethylsilane) that do not contain chlorine, thereby removing the harmful factor while maintaining the dielectric film formation capability
Solution Approach 2:
The patent changes the chemical composition parameters of the silicon-containing film by using organic silicon precursors with different molecular structures (silane, methylsilane, ethylsilane) to achieve high-purity films with improved reliability without chlorine-induced degradation
2Productivity
If device area is reduced for ultra-miniaturization, then integration density increases, but forming uniform thickness films becomes more difficult
Solution Approach 1:
The patent changes the physical and chemical parameters of the deposition process by using volatile organic silicon precursors that provide better vapor-phase distribution and more uniform decomposition characteristics, enabling consistent film thickness across reduced device areas
Solution Approach 2:
The patent replaces conventional liquid-phase or solid-phase silicon source delivery with vapor-phase deposition using volatile silicon compounds, which provides more uniform film formation through gas-phase transport and decomposition, achieving better thickness uniformity in miniaturized devices
3Productivity
If deposition speed is increased for productivity, then manufacturing efficiency improves, but film quality and purity may be compromised
Solution Approach 1:
The patent changes the reactivity and volatility parameters of the silicon precursor by using specially designed organic silicon compounds that decompose at optimal rates, enabling fast deposition speeds while maintaining high film purity through controlled vapor-phase reactions
Solution Approach 2:
The patent uses volatile organic silicon compounds as intermediary species that transport silicon atoms in vapor phase to the substrate, enabling controlled decomposition and high-purity film formation at elevated deposition rates without direct liquid or solid contact
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon compound enables the formation of high-purity silicon-containing films with improved electrical properties and reduced time-dependent dielectric film breakdown, offering excellent thermal stability and deposition speed, thus enhancing the manufacturing process for integrated circuit devices.
Implementation Method 1
forming a silicon compound adsorption layer on a surface of the substrate by supplying a silicon compound represented by Chemical Formula (1) onto the substrate
Implementation Method 2
forming a silicon-containing film on a substrate, by using a silicon compound represented by Chemical Formula (1)
Data Source
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AI summary
A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1): Chemical Formula (1) R1m(OR2)n(OR3)3-m-nSi-O-SiR4p(OR5)q(OR6)3-p-q, wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.