A silylated isocyanurate in organosilicon resin improves heat and sulfur resistance while protecting metal layers and transparency in LED encapsulation.
A fluorine-sulfuric etchant with nitrosylsulfuric acid selectively removes silicon over SiO2, helping prevent pattern exposure and shorts.
A silane additive forms a stable coating on silicon anodes to suppress electrolyte decomposition, reduce swelling, and improve battery cycle life.
A cyano silane electrolyte additive suppresses transition metal dissolution at high voltage, helping lithium secondary batteries retain capacity and life.
A high-packing organic compound boosts visible-light absorption and photoelectric conversion in display-embedded biometric sensors.
A grafted polymer brush on silicon anodes suppresses expansion and cracking, limits electrolyte contact, and improves cycle life.
A cyano-group electrolyte additive forms a stable positive-electrode film that suppresses transition metal dissolution at high voltage and heat.
Azide-alkyne silane chemistry enables rapid, spatially controlled nucleic acid immobilization on CMOS biochips without harsh pH or temperature.
A phosphorus-silicon compound in the electrolyte cuts Li-ion cell resistance and improves cycle retention for high-energy battery use.
An oxalate-based electrolyte forms a protective cathode film that suppresses metal leaching and side reactions in low-Co high-Ni batteries.
A thermal ALD route uses halide precursors and organosilanes to deposit titanium or aluminum films with minimal carbon and no plasma damage.
Nitrogen-functional silicon precursors enable low-temperature CVD and ALD films with higher growth rates, conformal coverage, and low wet etch rates.
A non-exciplex co-host expands TADF material selection and enables blue emitting layers without spectral red shift in light emitting devices.
A phosphorus-containing electrolyte additive coordinates with metal ions to cut initial resistance and preserve Li-ion capacity at high temperature.
A silicon-containing additive forms a protective interface film that suppresses electrolyte oxidation at 4.4V and improves hot storage and cycling.