Silicon Resist Laminate for High-Sensitivity EUV Pattern Resolution
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Solution Overview
Problem
Existing chemically amplified resist compositions for EUV lithography face challenges in achieving high sensitivity, resolution, and stability due to acid diffusion and shot noise, leading to pattern collapse and disconnecting, especially in miniaturized patterns.
Innovation Solution
A laminate structure comprising a silicon-containing resist underlayer film and a resist film containing hypervalent iodine compounds and carboxy group-containing compounds, which are applied with a specific solvent, to enhance sensitivity and resolution in electron beam and EUV lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chemically amplified resist compositions are used to enhance sensitivity and contrast through acid diffusion, then sensitivity and contrast are improved, but acid diffusion causes image blurs and deteriorates resolution in miniaturized patterns
Solution Approach 1:
The patent divides the resist system into multiple functional layers: a chemically amplified resist layer for sensitivity enhancement and a non-chemically amplified resist layer (PMMA-based) for high-resolution pattern definition. This segmentation allows each layer to perform its specialized function without the negative effects of acid diffusion affecting the critical pattern formation
Solution Approach 2:
The invention uses a composite resist structure combining chemically amplified resist materials (for sensitivity) with non-chemically amplified PMMA-based materials (for resolution). This composite approach leverages the advantages of both material types while mitigating their individual disadvantages
2Manufacturing precision
If non-chemically amplified resist compositions like PMMA are used to achieve high resolution, then resolution is improved, but sensitivity is insufficient
Solution Approach 1:
The patent merges the high-resolution capabilities of PMMA-based non-chemically amplified resist with the high sensitivity of chemically amplified resist by forming a multi-layer structure where both material types work together in sequence, with the chemically amplified layer performing the exposure function and the PMMA layer performing the pattern definition function
3Length of moving object
If EUV lithography is used to achieve miniaturized patterns, then pattern dimension is reduced, but shot noise increases causing line width roughness and pattern collapse
Solution Approach 1:
The patent introduces a multi-layer resist structure as an intermediary system between the EUV exposure and the final pattern. The chemically amplified resist layer absorbs the EUV energy efficiently, while the PMMA-based layer provides a stable, low-shot-noise platform for pattern formation, mediating the interaction between high-energy EUV radiation and the pattern formation process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminate provides high sensitivity and resolution, reducing shot noise and line width roughness, enabling precise microfabrication and preventing pattern collapse, suitable for advanced lithography processes.
Implementation Method 1
a carboxy group-containing compound, and a solvent; wherein the carboxy group-containing compound has a rigid skeleton and forms a crosslinked structure by a condensation reaction
Implementation Method 2
at least one hypervalent iodine compound selected from a hypervalent iodine compound represented by the following formula (7), a hypervalent iodine compound represented by the following formula (8) and a hypervalent iodine compound represented by the following formula (9)
Implementation Method 3
a silicon-containing resist underlayer film obtained from a silicon-containing resist underlayer film composition that contains a thermally crosslinkable polysiloxane
Data Source
AI summary
A laminate including a substrate, a silicon-containing resist underlayer film obtained from a silicon-containing resist underlayer film composition that contains a thermally crosslinkable polysiloxane containing any one or more from repeating units represented by formulae (1) to (3) and any one or more from repeating units represented by formulae (4) to (6), and a resist film obtained from a resist composition that contains at least one hypervalent iodine compound selected from a hypervalent iodine compound represented by formula (7), a hypervalent iodine compound represented by formula (8) and a hypervalent iodine compound represented by formula (9), a carboxy group-containing compound, and a solvent, in the listed order. This can provide a laminate that can satisfy both high sensitivity and high resolvability and allow for formation of a fine pattern in photolithography with a high energy line, a process for manufacturing such a laminate, and such a patterning process.