Silicon Thermopile Layout for High-Sensitivity Thermal Sensing
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Solution Overview
Problem
Existing thermopiles face challenges with low conversion efficiency, noise, and complex manufacturing processes, often requiring non-standard materials and expensive machinery.
Innovation Solution
An integrated thermal sensor is developed using a housing with a support region and thermocouple elements made of silicon-based materials, arranged in a matrix-like structure with elongated regions extending transversely, allowing for series coupling and efficient thermal conversion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If non-standard materials and complex processing steps are used to improve conversion efficiency, then efficiency increases, but manufacturing complexity and cost increase
Solution Approach 1:
The patent changes the material parameters by using standard semiconductor materials (silicon, silicon-germanium) with controlled doping concentrations and geometric parameters (vertical pillar structure, specific dimensions) to achieve high conversion efficiency without requiring nonstandard materials or complex processing
Solution Approach 2:
The patent employs standard, readily available semiconductor materials and conventional fabrication processes that are already widely used in the industry, avoiding the need for expensive specialized materials and equipment, thereby reducing manufacturing cost and complexity
2Loss of energy
If non-standard materials and complex machinery are used to improve efficiency, then conversion efficiency increases, but manufacturing cost increases
Solution Approach 1:
The patent achieves high conversion efficiency by optimizing geometric parameters (vertical pillar configuration, dimensions of thermoelectric regions) and material doping levels using standard semiconductor materials, eliminating the need for expensive nonstandard materials
Solution Approach 2:
The patent uses conventional semiconductor fabrication processes and standard materials that are already produced at scale in the industry, making manufacturing cost-effective and avoiding the need for expensive specialized equipment and materials
3Device complexity
If horizontal thermocouples on rigid substrates are used, then integration is achieved, but sensitivity is reduced and noise increases
Solution Approach 1:
The patent transitions from horizontal thermocouple configuration to a vertical pillar structure, utilizing the vertical dimension to improve thermal isolation and reduce noise while maintaining integration, thereby enhancing sensitivity without sacrificing integration benefits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high sensitivity, low noise, and improved efficiency with reduced manufacturing costs by utilizing standard semiconductor processes, suitable for various applications including portable devices.
Implementation Method 1
Each thermocouple element including a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient
Data Source
AI summary
Integrated thermal sensor having a housing delimiting an internal space. A support region extends through the internal space; a plurality of thermocouple elements are carried by the support region and are electrically coupled to each other. Each thermocouple element is formed by a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions is a silicon-based material. The first and second thermoelectrically active regions of each thermocouple element are formed by respective elongated regions extending at a mutual distance into the internal space of the housing, from and transversely to the support region.