Silicon Timepiece Components With Oxidation-Based Surface Refinement
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Solution Overview
Problem
Existing methods for manufacturing silicon timepiece components, such as hairsprings and balances, face challenges in achieving high precision and surface quality due to surface defects and roughness, which affect the performance and accuracy of timekeeping mechanisms.
Innovation Solution
A method involving a silicon-on-insulator substrate with deep reactive ion etching, followed by thermal oxidation and deoxidation to reduce surface defects and enhance mechanical strength, using a support member for homogeneous oxidation and precise component release, ensuring accurate dimensional control and surface finish.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing methods are used for silicon timepiece components, then production can be maintained, but surface defects and temperature sensitivity prevent high quality with precise dimensions and surface finishes
Solution Approach 1:
The patent applies thermal oxidation at controlled temperatures (typically 900-1200°C) to transform the silicon surface, creating a silicon oxide layer that eliminates surface defects and stabilizes dimensional precision. This parameter change (temperature-controlled oxidation) directly resolves the contradiction by improving surface quality while reducing temperature sensitivity of the components
Solution Approach 2:
The patent creates a composite structure consisting of a silicon base material combined with a silicon oxide surface layer through thermal oxidation. This composite material approach provides the benefits of both materials: the mechanical properties of silicon and the surface stability, defect-free characteristics, and temperature compensation properties of silicon oxide, thereby achieving high manufacturing precision while reducing harmful effects
2Manufacturing precision
If thermal oxidation is applied to reduce surface defects, then surface finish improves, but additional process steps increase manufacturing complexity
Solution Approach 1:
The patent combines multiple functions into the thermal oxidation process: surface defect elimination, dimensional stabilization, and temperature sensitivity compensation are all achieved through this single integrated process step, rather than requiring separate operations for each function
Solution Approach 2:
The thermal oxidation process is performed at an intermediate stage during manufacturing, before final component assembly and testing. This preliminary action ensures that surface defects are eliminated and dimensional precision is established early in the process, preventing the need for additional corrective steps later
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the production of silicon timepiece components with precise dimensions and improved surface finishes, enhancing the operational precision and performance of timekeeping mechanisms by reducing surface defects and temperature-dependent variations.
Implementation Method 1
thermal oxidation, and precise etching parameters to form components, followed by oxidation-deoxidation steps to reduce surface defects
Implementation Method 2
deep reactive ion etching
Data Source
AI summary
Disclosed is a method including the following steps: a) providing a substrate including a first silicon layer, a second silicon layer and an intermediate silicon oxide layer therebetween; b) etching the first silicon layer in order to form the timepiece components therein; c) releasing from the substrate a wafer formed by at least all or part of the etched, first silicon layer and including the timepiece components; d) thermally oxidizing and then deoxidizing the timepiece components; e) forming by thermal oxidation or deposition a silicon oxide layer on the timepiece components; f) detaching the timepiece components from the wafer.