Silicon Resist Underlayer Composition for High Wet Etch Rate
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Solution Overview
Problem
Current silicon-containing resist underlayer films for semiconductor processing require high etching rates and excellent lithographic properties, but existing compositions face challenges in achieving these while allowing for both dry and wet etching processes, particularly in EUV lithography where organic components reduce etching rates.
Innovation Solution
A silicon-containing resist underlayer film-forming composition comprising a polysiloxane with at least two hydroxy groups, nitric acid, and a solvent, which enables both dry and wet etching processes while maintaining high etching rates and lithographic performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a large amount of organic component (functional groups and photoacid generator) is added to improve lithographic properties and resolution, then lithographic properties are improved, but etching rate is reduced
Solution Approach 1:
The patent changes the chemical composition parameters by introducing a specific polysiloxane structure with siloxane units containing hydroxy groups. This structural modification enables the material to achieve both high lithographic properties and high etching rate by optimizing the molecular architecture rather than simply increasing organic component concentration
Solution Approach 2:
The patent creates a composite material system combining polysiloxane with specific siloxane unit structures and hydroxy groups. This composite structure integrates the benefits of silicon-containing materials (high etching rate) with organic functional groups (lithographic properties), resolving the contradiction between the two requirements
2Adaptability or versatility
If conventional dry etching is used for underlayer film removal, then etching process is established, but wet etching capability is insufficient
Solution Approach 1:
The patent designs the polysiloxane-based underlayer film to be universally removable by multiple etching methods (both dry and wet etching). The specific siloxane unit structure with hydroxy groups provides chemical reactivity that enables wet etching while maintaining compatibility with existing dry etching processes, making the material multi-functional in terms of removal methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition allows for effective removal of the underlayer film through both conventional dry etching and chemical wet etching, achieving high etching rates and excellent lithographic properties, suitable for further miniaturization in semiconductor processing.
Implementation Method 1
a polysiloxane containing a siloxane unit structure having at least two hydroxy groups
Implementation Method 2
a polysiloxane containing a siloxane unit structure having at least two hydroxy groups
Implementation Method 3
nitric acid
Data Source
AI summary
A silicon-containing resist underlayer film-forming composition for forming a resist underlayer film that exhibits excellent lithographic properties and achieves a high etching rate in a wet etching process. A silicon-containing resist underlayer film-forming composition including: [A] a polysiloxane containing a siloxane unit structure having at least two hydroxy groups; [B] nitric acid; and [C] a solvent.