Silicon Via Connection Structure for Self-Aligned Rear Electrodes
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Solution Overview
Problem
Existing electronic devices face challenges in ensuring electrical connections between conductive electrodes and interconnect structures while maintaining electrical insulation from the substrate, leading to misalignment issues during manufacturing.
Innovation Solution
A method involving a silicon substrate with a via structure comprising a conductive core and insulating sheath, where the substrate is etched and polished to expose the core, and a conductive electrode is formed in contact with the core, with an additional insulating layer and quantum film for infrared light conversion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the substrate is etched to expose the via core, then electrical connection is achieved, but electrical insulation from the substrate is compromised
Solution Approach 1:
The patent divides the via structure into distinct segments: a conductive core for electrical connection and a separate insulating sheath that remains after substrate etching. This segmentation allows the core to provide electrical connectivity while the sheath maintains insulation, resolving the contradiction between achieving electrical connection and maintaining insulation.
Solution Approach 2:
The insulating sheath acts as an intermediary element between the conductive via core and the substrate. It enables the core to be exposed for electrical connection while simultaneously preventing direct contact between the core and substrate, thus maintaining electrical insulation. The sheath mediates between the conflicting requirements of connection and insulation.
2Ease of manufacture
If conventional manufacturing methods are used, then electrical connections can be formed, but misalignment issues occur during manufacturing
Solution Approach 1:
The insulating sheath serves a dual function: it provides electrical insulation and acts as a self-aligned mask during substrate etching. The sheath's position on the via core automatically defines the etching boundaries, eliminating the need for separate alignment steps and reducing misalignment issues. This self-service approach resolves the contradiction between ease of manufacture and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method ensures self-aligned electrical connections and maintains electrical insulation between the electrode and substrate, reducing misalignment issues and improving the manufacturing process efficiency.
Implementation Method 1
performing a chemical-mechanical polishing of the insulating layer to expose the conductive core of said at least one via while leaving in place a portion of the thickness of the insulating layer on the rear surface
Implementation Method 2
The quantum film is configured to convert infrared light into electron-hole pairs
Data Source
AI summary
The present description concerns a manufacturing method comprising the following steps: providing a silicon substrate having a via penetrating into the substrate from its front surface and comprising a silicon conductive core and a silicon oxide insulating sheath; etching the substrate from its rear surface, selectively over the sheath so that a portion of said at least one via protrudes from the rear surface; depositing a silicon oxide insulating layer on the rear surface; polishing the insulating layer to expose the core while leaving in place a portion of the thickness of the insulating layer; and forming a conductive electrode in contact with the core.