SiN Optical Demultiplexing Chip With Low-Loss Temperature Stability
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Solution Overview
Problem
Current wavelength division demultiplexing receiver optical chips made of silicon material suffer from high insertion loss, temperature sensitivity, and high costs, requiring temperature cooling control.
Innovation Solution
Implement on-chip integration of a wavelength division demultiplexing receiver optical chip using silicon nitride (SiN) material for passive devices and an active photodetector on a silicon-on-insulator (SOI) platform, compatible with CMOS, to achieve low-loss and temperature-insensitive operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a wavelength demultiplexer is made of silicon material, then the device can be integrated on a silicon platform, but it suffers from high insertion loss and large temperature drift coefficient
Solution Approach 1:
The patent employs silicon nitride (SiN) material for the wavelength demultiplexer instead of traditional silicon material. SiN provides lower insertion loss and reduced temperature drift coefficient while maintaining compatibility with silicon-based photodetectors through hybrid integration, thus resolving the contradiction between ease of manufacture and energy loss.
Solution Approach 2:
The patent changes the material parameter from silicon to silicon nitride, which fundamentally alters the optical properties including insertion loss and temperature sensitivity. This material substitution resolves the technical contradiction by providing superior optical performance while maintaining manufacturability through established SiN fabrication processes.
2Ease of manufacture
If a wavelength demultiplexer is made of silicon material, then the device can be integrated on a silicon platform, but it requires temperature cooling control
Solution Approach 1:
The patent employs silicon nitride (SiN) material for the wavelength demultiplexer instead of traditional silicon material. SiN provides lower insertion loss and reduced temperature drift coefficient while maintaining compatibility with silicon-based photodetectors through hybrid integration, thus resolving the contradiction between ease of manufacture and energy loss.
Solution Approach 2:
The patent changes the material parameter from silicon to silicon nitride, which fundamentally alters the optical properties including insertion loss and temperature sensitivity. This material substitution resolves the technical contradiction by providing superior optical performance while maintaining manufacturability through established SiN fabrication processes.
3Device complexity
If silicon material is used for the wavelength demultiplexer, then the device structure can be simplified, but the cost increases due to cooling requirements
Solution Approach 1:
The patent employs silicon nitride (SiN) material for the wavelength demultiplexer instead of traditional silicon material. SiN provides lower insertion loss and reduced temperature drift coefficient while maintaining compatibility with silicon-based photodetectors through hybrid integration, thus resolving the contradiction between ease of manufacture and energy loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiN-SOI hybrid integration results in a demultiplexing chip that does not require cooling, with reduced insertion loss and costs, and maintains performance stability, enhancing performance and effectiveness.
Implementation Method 1
a polarization splitter and rotator PSR, configured to perform first processing on the first optical signal to generate a second optical signal, where the second optical signal is in a transverse electric TE mode
Implementation Method 2
at least one wavelength demultiplexer DeMux, configured to perform second processing on the second optical signal to generate a third optical signal, where the third optical signal is a multi-channel single-wavelength optical signal
Implementation Method 3
a photodetector array, configured to convert the third optical signal into an electrical signal
Data Source
Figure 1~2
Figure 3~4(b)
Figure 5
AI summary
This application provides an optical chip, an optical chip fabrication method, an optical signal transmission method, and an optical module. The optical chip includes: an optical port, coupled to a fiber and configured to receive a first optical signal from the fiber, where the first optical signal includes a component in a transverse magnetic TM mode; a polarization splitter and rotator PSR, configured to perform first processing on the first optical signal to generate a second optical signal, where the second optical signal is in a transverse electric TE mode, and the second optical signal is a single-channel multi-wavelength optical signal; at least one wavelength demultiplexer DeMux, configured to perform second processing on the second optical signal to generate a third optical signal, where the third optical signal is a multi-channel single-wavelength optical signal; and a photodetector array, configured to convert the third optical signal into an electrical signal. The optical port, the PSR, and the at least one DeMux are made of silicon nitride SiN.