Single-Crystal Silicon Particle Active Matrix OLED Backplane
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Solution Overview
Problem
Current Active Matrix Organic Light Emitting Diode (AM-OLED) displays face challenges due to the use of amorphous silicon, which has limited mobility and efficiency compared to single-crystal silicon, and the complexity of fabricating electronic devices on curved surfaces such as silicon spheres.
Innovation Solution
The method involves positioning and planarizing semiconductor particles, specifically single-crystal silicon spheres, on a substrate to create planar surfaces for fabricating electronic devices, allowing for the formation of controllable gated electronic components that control OLED pixels, thereby overcoming the limitations of amorphous silicon and enabling efficient OLED panel production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If amorphous silicon is applied to the entire substrate panel and re-crystallized using large excimer lasers, then the substrate can be processed on a large scale, but the resulting poly-crystal silicon has much lower electron mobility compared to single-crystal silicon
Solution Approach 1:
The substrate panel is divided into multiple smaller single-crystal silicon wafers (e.g., 6-inch or 8-inch wafers) that are individually processed to maintain single-crystal quality, then arranged and connected to form a large-area display panel. This segmentation allows each wafer to retain high electron mobility characteristics while achieving the required large overall area.
Solution Approach 2:
Multiple single-crystal silicon wafers are nested or tiled together within the large substrate panel framework, creating a hierarchical structure where small high-performance units combine to form a large-scale system. The wafers are positioned in a grid pattern and electrically interconnected to function as a unified large-area device.
2Reliability
If single-crystal silicon wafers are used for display fabrication, then high electron mobility is achieved, but the wafers are too costly and too small in size compared to large display panels
Solution Approach 1:
Instead of using one large expensive single-crystal wafer, the display panel is segmented into multiple smaller single-crystal silicon wafers that are more cost-effective and readily available. These segmented wafers are then assembled to cover the entire display area, achieving both cost efficiency and high performance.
Solution Approach 2:
Multiple separate single-crystal silicon wafers are merged or integrated into a unified display panel structure through precise positioning and electrical interconnection. The combined assembly functions as a single large-area high-performance device, leveraging the advantages of single-crystal material while overcoming size and cost limitations.
3Adaptability or versatility
If lithographic structures are defined on spherical silicon surfaces, then three-dimensional integration is achieved, but non-standard optics and techniques are required increasing fabrication complexity
Solution Approach 1:
Instead of placing lithographic patterns directly on curved spherical surfaces which requires complex non-standard optics, the approach is inverted: planar lithographic patterns are first defined on flat surfaces, then the substrate is curved or folded to achieve three-dimensional integration. This maintains compatibility with standard planar lithography tools while achieving 3D functionality.
Solution Approach 2:
A planar intermediate layer or transfer substrate is introduced as a mediator between the standard planar lithography process and the final three-dimensional structure. Patterns are created on the planar intermediate layer, which is then transferred or mapped onto the curved surface, eliminating the need for complex spherical lithography optics.
Data Source
AI summary
There is provided a method of forming an active matrix electro-optical device, the method comprising providing a backplane comprising: a backplane substrate; a semiconductor particle formed separately from the backplane substrate and then fixed upon the backplane substrate at a predetermined position; the semiconductor particle planarized to remove portions of the semiconductor particle and to expose at a cross-section of the semiconductor particle a planar surface; and a controllable gated electronic component on or directly beneath the planar surface, the controllable gated electronic component configured to control one or more pixels of the electro-optical device. The method also comprises providing an optical portion comprising one or more pixel regions, the optical portion electrically connected to the backplane such that at least one of the pixel regions of the optical portion is electrically connected to the controllable gated electronic component.