Single-Die Semiconductor Integration for Low-Parasitic Heterostructures
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Solution Overview
Problem
The integration of silicon-based and heterostructure-based electronic components in a single semiconductor device leads to high area occupation, manufacturing costs, power consumption, and low electrical performances due to parasitic capacitances, resistances, or inductances introduced by electrical connections between dice.
Innovation Solution
A manufacturing process where an epitaxial region of a single semiconductor material and an epitaxial multilayer comprising a heterostructure are formed on different portions of a substrate layer, with a separation portion in between, allowing for the integration of silicon-based and heterostructure-based electronic components in a single die without interfering with each other's manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based and heterostructure-based electronic components are integrated in different dice, then manufacturing processes do not interfere with each other, but area occupation and manufacturing cost increase
Solution Approach 1:
The patent merges silicon-based and heterostructure-based components into a single integrated die, combining previously separate manufacturing processes into one unified structure. This reduces area occupation while maintaining process compatibility through careful sequencing of epitaxial growth and doping operations.
Solution Approach 2:
The patent uses vertical layering in the epitaxial structure to separate different component types spatially. By stacking silicon-based and heterostructure-based components in vertical layers within the same die, it achieves high integration density without horizontal expansion, resolving the area occupation issue.
2Ease of manufacture
If silicon-based and heterostructure-based electronic components are integrated in different dice, then manufacturing processes do not interfere with each other, but electrical performances decrease due to parasitic effects
Solution Approach 1:
The patent transitions from horizontal separation (different dice) to vertical integration (layers within single die). This dimensional change minimizes interconnection path lengths, reducing parasitic capacitances, resistances, and inductances, thereby improving electrical performances while maintaining process compatibility.
3Area of stationary object
If silicon-based and heterostructure-based electronic components are integrated in a single die, then area occupation and manufacturing cost are reduced, but manufacturing process complexity increases
Solution Approach 1:
The patent segments the integrated die into distinct regions: a first portion for silicon-based components and a second portion for heterostructure-based components. This segmentation allows independent optimization of each component type's manufacturing process while maintaining overall integration, reducing the perceived complexity through modular organization.
Solution Approach 2:
The patent performs preliminary epitaxial growth to form the complete layered structure before subsequent doping and component fabrication. This preliminary action establishes the spatial framework early, allowing later processing steps to proceed independently on different portions, thereby managing complexity through staged manufacturing.
4Ease of manufacture
If silicon-based and heterostructure-based electronic components are integrated in different dice, then manufacturing process compatibility is maintained, but power consumption increases
Solution Approach 1:
The patent uses vertical integration to minimize horizontal current paths and interconnection lengths. This dimensional change reduces resistive losses and parasitic effects in power delivery networks, lowering power consumption while maintaining manufacturing compatibility through unified processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the combination of silicon-based and heterostructure-based components in a single die, reducing the device's size while maintaining high electrical performances, minimizing parasitic effects, and simplifying the manufacturing process.
Implementation Method 1
forming, on a first portion of a substrate layer having a first portion and a second portion, an epitaxial region of a single semiconductor material; forming, on the second portion of the substrate layer, an epitaxial multilayer comprising a heterostructure
Data Source
AI summary
For manufacturing a semiconductor electronic device a wafer is provided which has a substrate layer of semiconductor material having a first portion and a second portion distinct from the first portion. An epitaxial region of a single semiconductor material is grown on the first portion of the substrate layer. An epitaxial multilayer having a heterostructure is grown on the second portion of the substrate layer. A first electronic component based on the single semiconductor material is formed from the epitaxial region and a second electronic component based on heterostructure is formed from the heterostructure. Forming a first electronic component comprises forming a plurality of doped regions in the epitaxial region, after the step of growing an epitaxial multilayer.