Single-Pass Lithography for 3D Semiconductor Components
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Solution Overview
Problem
Current photolithography techniques require multiple exposure passes to form multiple aerial images at different planes, which increases processing time and complexity, and struggle to achieve precise control over the separation distance between these images.
Innovation Solution
A method and system that direct a pulsed light beam with varying primary wavelengths through a mask during a single exposure pass to generate multiple aerial images at distinct planes on a wafer, allowing for precise control over the separation distance and formation of three-dimensional semiconductor components without moving the optical system or wafer relative to each other.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple exposure passes are used to form multiple aerial images at different planes, then the separation distance between images can be controlled, but processing time and system complexity increase
Solution Approach 1:
The patent combines multiple exposure operations into a single exposure pass by using a pulsed light beam with different wavelengths. Each wavelength focuses at a different plane, creating multiple aerial images simultaneously without requiring multiple separate exposure passes, thereby reducing processing time while maintaining separation distance control
Solution Approach 2:
The patent changes the wavelength parameter of the light beam to achieve different focal planes. By varying the wavelength within the pulsed light beam, the system creates aerial images at different separation distances along the direction of propagation, enabling precise control of separation distance within a single exposure pass
2Manufacturing precision
If multiple exposure passes are used to form multiple aerial images, then manufacturing precision can be maintained, but device complexity increases
Solution Approach 1:
The patent merges multiple exposure functions into a single exposure pass by utilizing a pulsed light beam with spectrally distinct wavelengths. This approach maintains the precision of multiple aerial image formation while simplifying the exposure system by eliminating the need for multiple separate exposure passes and associated mechanical movements
Solution Approach 2:
The patent replaces mechanical systems (multiple exposure passes requiring mechanical movement of masks or wafers) with an optical system that uses wavelength variation to achieve the same effect. The pulsed light beam with different wavelengths creates multiple focal planes without requiring mechanical repositioning, thereby reducing device complexity
3Productivity
If a single exposure pass is used with varying wavelengths, then processing time is reduced, but achieving precise separation distance control becomes more difficult
Solution Approach 1:
The patent uses wavelength as a controllable parameter to precisely determine separation distance. By selecting specific wavelengths for the pulsed light beam, the system achieves precise control over the separation distance between aerial images while maintaining high productivity through single-pass exposure
Solution Approach 2:
The patent incorporates feedback mechanisms to monitor and adjust the wavelength of the pulsed light beam, ensuring precise separation distance control. The system measures the actual separation distance and adjusts the wavelength parameters to achieve the desired precision while maintaining high exposure throughput
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of three-dimensional semiconductor components with improved precision and efficiency by creating multiple aerial images at different planes within a single exposure pass, increasing the depth of focus and reducing processing time and complexity.
Implementation Method 1
At least one of the pulses in the set of pulses has a first primary wavelength and at least one of the other pulses in the set of pulses has a second primary wavelength that is different from the first primary wavelength, such that the separation distance is formed during the single exposure pass based on the difference between the first primary wavelength and the second primary wavelength
Data Source
AI summary
A set of the pulses of light in a light beam is passed through a mask toward a wafer during a single exposure pass; at least a first aerial image and a second aerial image on the wafer based on pulses of light in the set of pulses that pass through the mask is generated during a single exposure pass, the first aerial image is at a first plane on the wafer and the second aerial image is at a second plane on the wafer, the first plane and the second plane being spatially distinct from each other and separated from each other by a separation distance along the direction of propagation; and a three-dimensional semiconductor component is formed.