Single Port Memory Multiple Operations Clock Cycle
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Solution Overview
Problem
Existing single-port and dual-port Block Random Access Memory (BRAM) configurations face inefficiencies in terms of circuit size, power consumption, and data processing when attempting to perform multiple read/write operations in a single clock cycle, particularly with quad-port BRAM requiring additional logic circuitry and parallel data presence, which increases complexity and power usage.
Innovation Solution
A single-port memory device is designed to perform multiple read/write operations in a single clock cycle using clock signal generation and self-timing path circuitry, eliminating the need for additional ports and reducing chip space and power consumption by integrating clock generation and self-timing path circuitry within the memory device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If quad-port BRAM is used to perform multiple read/write operations in a single clock cycle, then data processing capability is improved, but device complexity and power consumption increase due to additional logic circuitry and parallel data presence requirements
Solution Approach 1:
The patent segments the clock cycle into multiple sub-cycles or phases, allowing multiple read/write operations to be performed sequentially within a single clock period. The memory device divides the operation sequence into distinct phases (e.g., first read operation, second read operation, write operation) that are executed in order, eliminating the need for parallel ports while maintaining high data processing capability.
Solution Approach 2:
The patent implements dynamic operation modes where the memory device can switch between different operational states (read, write, hold) based on control signals. The self-time path circuitry dynamically adjusts the timing of operations within the clock cycle, allowing flexible sequencing of multiple read/write operations without requiring additional static ports or logic circuitry.
2Productivity
If quad-port BRAM is used to perform multiple read/write operations in a single clock cycle, then data processing capability is improved, but power consumption increases due to additional logic circuitry and parallel data presence
Solution Approach 1:
By segmenting the operations into sequential phases rather than parallel operations, the patent reduces the need for multiple data paths and logic circuitry that would otherwise be required for simultaneous read/write operations. This segmentation approach maintains data processing capability while significantly reducing power consumption by eliminating redundant circuit components.
Solution Approach 2:
The patent extracts the timing control functionality from external logic circuitry and integrates it into the memory device's self-time path circuitry. This extraction eliminates the need for additional external logic gates and control circuits that would increase power consumption, while still enabling coordinated sequential operations within the clock cycle.
3Productivity
If additional ports are added to enable multiple read/write operations in a single clock cycle, then data processing capability is improved, but chip space increases
Solution Approach 1:
The patent uses segmentation to perform multiple operations sequentially within a single clock cycle, eliminating the need for additional physical ports. The memory device internally divides the operation sequence into phases (first read, second read, write) and executes them in order using the same port, thereby maintaining high data processing capability without increasing chip area.
Solution Approach 2:
The patent makes the single port multi-functional by enabling it to perform multiple operations (read, write, hold) in different phases within a single clock cycle. The self-time path circuitry controls the port's functionality dynamically, allowing one port to serve multiple purposes that would traditionally require multiple dedicated ports, thus reducing chip space requirements.
Data Source
AI summary
An integrated circuitry (IC) device for a memory device includes driver circuitry, selection circuitry, clock generation circuitry, and self-time path circuitry. The driver circuitry generates a plurality of driver circuitry outputs. The selection circuitry selects one of the plurality of driver circuitry outputs based on a plurality of enable signals. The clock generation circuitry receives the selected one of the plurality of driver circuitry outputs from the selection circuitry, and generates a clock signal based on at least the selected one of the plurality of driver circuitry outputs from the selection circuitry. The self-time path circuitry of a memory receives the clock signal and generates a reset signal based on the clock signal. The plurality of driver circuitry outputs and the clock signal are based on the reset signal, and the self-time path circuitry corresponds to one or more columns of a memory bank.