Single-Rail SRAM Global Data Line With Automatic Three-State Drivers
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Solution Overview
Problem
High-density SRAM devices with multiple sub-arrays face significant power and timing constraints due to heavy loads on global data lines that connect across different bit cells, consuming a substantial portion of the total timing and power budgets.
Innovation Solution
Implementing a single-rail static-operation global data line with automatic three-state drivers and sense amplifiers, eliminating the need for gating signals and utilizing static signals, which reduces power consumption and improves circuit speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a global data line is used to connect bit cells across multiple sub-arrays in high-density SRAM devices, then data access capability is improved, but power consumption increases significantly
Solution Approach 1:
The patent divides the SRAM device into multiple sub-arrays (Block 0 through Block 3) with separate bit lines for each sub-array. This segmentation allows each sub-array to be independently accessed through its own bit line, eliminating the need for a single heavy-load global data line that spans all sub-arrays, thereby reducing power consumption while maintaining data access capability.
Solution Approach 2:
The patent transitions from a single-rail global data line approach to a multi-rail approach where multiple bit lines operate in parallel across different sub-arrays. This dimensional expansion allows simultaneous data access across multiple sub-arrays without creating a single bottleneck, reducing the load on any individual data line and lowering overall power consumption.
2Adaptability or versatility
If a global data line runs across different bit cells of multiple sub-arrays, then data transmission coverage is improved, but timing budget is consumed significantly
Solution Approach 1:
By segmenting the data transmission paths into separate bit lines for each sub-array, the patent eliminates the long propagation path of a single global data line spanning all sub-arrays. Each sub-array can be accessed through its own local bit line, significantly reducing propagation delay and improving timing performance while maintaining comprehensive data transmission coverage.
Solution Approach 2:
The patent implements pre-charging of bit lines before data access operations. This preliminary action ensures that data lines are already in the appropriate state before data transmission begins, reducing setup time and improving overall timing performance by eliminating delays associated with state transitions during data access.
3Speed
If automatic three-state drivers are used on a single-rail static-operation global data line, then circuit speed is improved, but device complexity increases
Solution Approach 1:
The patent employs automatic three-state drivers that dynamically adjust the output state based on data validity and drive requirements. These drivers automatically transition between high-impedance, high, and low states without requiring external gating signals, enabling faster data bus arbitration and signal transitions while managing complexity through automated control logic integrated into the driver circuitry itself.
Data Source
AI summary
Various aspects include a circuit having a single-rail static-operation global data line of a synchronous random-access memory (SRAM). The circuit can include one or more automatic three-state drivers coupled to the single-rail static operation global data line of the SRAM. The circuit can include one or more sense amplifiers coupled to the one or more automatic three-state drivers. The circuit can include a latch coupled to the single-rail static-operation global data line. Some embodiments can include a method for operating a global data line of a multi-array SRAM. The method can include connecting a single-rail static-operation global data line of the SRAM to one or more automatic three-state drivers of the SRAM, and operating the one or more automatic three-state drivers without a gating signal. The method can include operating the single-rail global data line of the SRAM with a static signal.


