Sintered Capacitor Dielectric Curved Wall Structure
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Solution Overview
Problem
Existing capacitors face challenges such as dielectric layer cracking under stress, difficulty in forming thin dielectric layers with high precision, and void formation between electrodes, leading to capacitance variations and reliability issues.
Innovation Solution
A capacitor design featuring a sintered dielectric structure with a continuous wall of non-straight shape, where the dielectric structure and electrodes are formed simultaneously, using materials like BaTiO3 and Ni to enhance capacitance and reliability, and a manufacturing method that includes forming a mask, loading dielectric material, and firing to prevent cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a thin dielectric layer is formed to increase capacitance, then the capacitance increases, but the dielectric layer is prone to cracking under stress
Solution Approach 1:
The dielectric structure is formed with a curved, non-straight configuration instead of a flat plate-like structure. This curvature allows the dielectric to better accommodate thermal and mechanical stress, preventing cracking while maintaining thin dimensions for high capacitance.
Solution Approach 2:
The invention changes the geometric parameters of the dielectric structure from flat to curved, and controls the thickness to be within a specific range (10-100 nm) to achieve optimal balance between capacitance and stress resistance.
2Ease of manufacture
If conventional methods are used to form dielectric layers, then the manufacturing process is simple, but it is difficult to achieve high thickness precision and uniformity
Solution Approach 1:
The invention replaces conventional mechanical deposition methods with atomic layer deposition (ALD), a chemical vapor deposition technique that provides precise control over thin film thickness and composition, achieving uniform dielectric layers with controlled thickness in the 10-100 nm range.
3Quantity of substance
If dielectric layers are formed between electrodes, then capacitance is achieved, but voids may form between the electrodes and dielectric structure
Solution Approach 1:
The curved configuration of the dielectric structure eliminates flat interfaces where voids typically form. The non-straight shape ensures complete contact between the dielectric and electrodes, preventing void formation and improving interface quality while maintaining capacitance.
4Ease of manufacture
If flat plate-like dielectric structures are used, then the manufacturing is easy, but the dielectric layers are apt to crack under stress from heat or external force
Solution Approach 1:
The dielectric structure employs a curved, non-straight configuration that inherently resists cracking under thermal and mechanical stress. This curved design maintains manufacturing feasibility while dramatically improving reliability compared to flat plate-like structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases capacitance and reliability by preventing dielectric cracking and void formation, while allowing for precise control of dielectric thickness and improved electrode surface areas.
Implementation Method 1
a sintered dielectric structure with a continuous wall of non-straight shape
Data Source
AI summary
A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction. A manufacturing method for the capacitor includes forming the dielectric structure, and forming the first electrode and the second electrode simultaneously after the formation of the dielectric structure.