SiNx Adhesion Layer for Smooth Copper HSIO Interconnects
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Solution Overview
Problem
The use of roughened copper surfaces for adhesion between copper and dielectric layers in semiconductor packaging leads to increased insertion loss and resistance, especially at high frequencies, and results in delamination issues due to sub-optimal adhesion strength.
Innovation Solution
Implementing a surface-functionalized adhesion promoting layer, such as SiNx, with covalent bonding capabilities to enhance adhesion between copper traces and dielectric layers, using treatments like hydrofluoric acid or plasma processes to create reactive ligands or catalysts for stronger chemical bonds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the copper surface is roughened to improve adhesion between copper and dielectric, then adhesion strength is improved, but insertion loss increases and electrical resistance increases at high frequencies
Solution Approach 1:
The patent introduces an adhesion promoter layer as an intermediary substance between the copper trace and the dielectric layer. This mediator provides the necessary adhesion strength through chemical bonding mechanisms while allowing the copper surface to remain smooth, thereby avoiding the insertion loss and resistance penalties associated with surface roughening.
Solution Approach 2:
The patent replaces the mechanical adhesion mechanism (roughening copper surface to create physical anchors) with a chemical adhesion mechanism (adhesion promoter layer forming chemical bonds). This substitution eliminates the need for mechanical surface modification while achieving equivalent or superior adhesion strength.
2Strength
If the copper surface is roughened to provide mechanical anchors for dielectric adhesion, then adhesion is improved, but manufacturing complexity increases due to additional processing steps
Solution Approach 1:
The adhesion promoter layer serves as a mediator that simplifies the manufacturing process by providing a dedicated functional layer for adhesion, separating the adhesion function from the copper trace fabrication process and enabling more straightforward processing steps.
3Loss of energy
If a smooth copper surface is used to reduce insertion loss, then electrical performance is improved, but adhesion strength between copper and dielectric deteriorates
Solution Approach 1:
The adhesion promoter layer acts as an intermediary that enables smooth copper surfaces to achieve strong adhesion. The mediator layer compensates for the lack of mechanical anchoring on smooth surfaces by providing chemical bonding capabilities, thus decoupling the relationship between surface roughness and adhesion strength.
Solution Approach 2:
The patent creates a composite structure consisting of the copper trace, adhesion promoter layer, and dielectric layer. This composite material system combines the electrical advantages of smooth copper with the adhesion benefits of chemically active materials, achieving both low insertion loss and strong adhesion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves electrical performance by reducing surface roughness, maintaining adhesion strength, and allowing the use of cost-effective wet etching processes while preventing delamination.
Implementation Method 1
surface-functionalized adhesion promoting layer, such as SiNx, with covalent bonding capabilities
Implementation Method 2
treat the silicon nitride layer with hydrofluoric acid or undergo plasma processes to create reactive ligands
Data Source
AI summary
Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate with a plurality of first layers, where the first layers comprise an organic material. In an embodiment, a trace is embedded in the package substrate, and a second layer is over the trace, where the second layer comprises silicon and nitrogen. In an embodiment, the second layer is chemically bonded to the one of the first layers.


