SiOCN Film Formation for Low-Temperature Etch Stop Layers
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Solution Overview
Problem
Existing methods for forming silicon nitride films often require high temperatures and result in high wet etch rates, making them unsuitable for certain applications, particularly in the manufacturing of electronic devices where low etch resistance and high deposition temperatures are undesirable.
Innovation Solution
A method involving thermal cyclic deposition using atomic layer deposition (ALD) to form a SiOCN layer on a substrate, which provides improved wet etch resistance at relatively low temperatures (300° C. to 600° C.) and within a pressure range of 0.5 to 50 Torr, with a carbon content of 5% to 60% atomic percentage, suitable for spacer formation and etch stop layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If LPCVD techniques are used to deposit silicon nitride films with low wet etch rates, then wet etch resistance is improved, but deposition temperature becomes excessively high
Solution Approach 1:
The patent changes the compositional parameters of the silicon nitride film by incorporating oxygen and carbon to create SiOCN, altering the material properties to achieve low wet etch rates at lower temperatures. This compositional modification allows the film to maintain etch resistance without requiring the high temperatures of LPCVD
Solution Approach 2:
The patent creates a composite material SiOCN by combining silicon, oxygen, carbon, and nitrogen elements. This composite structure provides the desired wet etch resistance while enabling deposition at lower temperatures through PECVD, resolving the contradiction between etch resistance and deposition temperature
2Temperature
If PECVD techniques are used to deposit silicon nitride films at lower temperatures, then deposition temperature is reduced, but wet etch rate increases
Solution Approach 1:
The patent modifies the chemical composition parameters by incorporating oxygen and carbon into the silicon nitride matrix, creating SiOCN with enhanced wet etch resistance. This compositional change allows PECVD-deposited films to achieve low wet etch rates while maintaining lower deposition temperatures
Solution Approach 2:
The patent introduces oxygen and carbon as intermediary elements that mediate between the silicon nitride matrix and the etching process. These intermediary elements modify the film's chemical structure to provide resistance against wet etchants while allowing lower temperature deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiOCN layer achieves desired etch-resistant properties, reducing wet etch rates and allowing for the formation of structures suitable for electronic devices, particularly in spacer formation and oxide etching of high aspect ratio features, while maintaining a lower temperature deposition process.
Implementation Method 1
the step of depositing includes atomic layer deposition (ALD)
Data Source
AI summary
A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.