SiOx Buffer Layer Formation in LTPS via Alkali Ion Diffusion
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Solution Overview
Problem
The existing methods for forming buffer layers in LTPS products face challenges such as cross-contamination and poor electrical characteristics due to multi-layer structures, which increase manufacturing costs and reduce component performance.
Innovation Solution
A method involving oven heating or rapid thermal annealing to diffuse and eliminate alkali metal ions on a substrate, followed by forming a single SiOx buffer layer using low-concentration acid pickling and plasma-enhanced chemical vapor deposition, optimizing the buffer layer quality and reducing the need for complex SiNx layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SiO2/SiNx/SiO2 triple structure is used as buffer layer, then metal ion separation effect is improved, but device complexity increases and manufacturing precision deteriorates
Solution Approach 1:
The patent extracts and removes the SiNx layer from the traditional SiO2/SiNx/SiO2 triple structure, retaining only the SiO2 layers. This simplification maintains the metal ion separation function while eliminating the complexity introduced by the intermediate SiNx layer, directly resolving the contradiction between reliability and device complexity.
Solution Approach 2:
The patent merges the functions of the three-layer structure into a simplified two-layer SiO2 structure. By combining the separation functions that were previously distributed across SiO2-SiNx-SiO2 into a streamlined SiO2-SiO2 configuration, the patent achieves comparable metal ion separation performance with reduced structural complexity.
2Reliability
If SiO2/SiNx/SiO2 triple structure is used as buffer layer, then metal ion separation effect is improved, but manufacturing time increases
Solution Approach 1:
By extracting and eliminating the SiNx layer formation process from the manufacturing sequence, the patent reduces the total number of deposition and treatment steps. This directly decreases manufacturing time while preserving the essential metal ion separation functionality through the simplified SiO2-based structure.
3Reliability
If SiO2/SiNx/SiO2 triple structure is used as buffer layer, then metal ion separation effect is improved, but film thickness increases
Solution Approach 1:
The patent removes the intermediate SiNx layer, which contributes to the overall thickness of the buffer layer. This extraction reduces the total film thickness while maintaining adequate metal ion separation performance through the optimized SiO2 layer configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces cross-contamination, enhances electrical characteristics, and decreases manufacturing costs by simplifying the process and reducing film thickness, while maintaining better stress matching and performance compared to traditional SiO2/SiNx/SiO2 triple structures.
Implementation Method 1
diffusing the alkali metal ions to the surface of the substrate... (b) diffusing the alkali metal ions to the surface of the substrate; (c) eliminating the alkali metal ions on the surface of the substrate... oven heating or rapid thermal annealing to diffuse and eliminate alkali metal ions on a substrate
Implementation Method 2
forming a single SiOx buffer layer using low-concentration acid pickling and plasma-enhanced chemical vapor deposition
Data Source
AI summary
The present disclosure disclosed a method of forming the buffer layer in the LTPS products. The method comprises the following steps: heating the substrate to make the alkali metal ions diffuse to the surface of the glass; washing the substrate by acid to remove the alkali metal ions on the surface of the glass; forming the buffer layer on the glass which has been heated and washed by acid, wherein the material of the buffer layer is SiOx. The method of the present disclosure based on the design of the single buffer layer, it can greatly promote the capacity and can economize the gas. Furthermore, it can avoid the cross contamination of the different layers so as to promote characteristic of the element.