SiPM Sensor Dummy Pixel for High-Intensity Light Noise Reduction

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Solution Overview

Problem

Silicon photomultiplier (SiPM) sensors in LIDAR systems face performance degradation and noise due to high-intensity light, causing prolonged output and interference from carriers generated outside the sensor area, which affects distance measurement accuracy.

Innovation Solution

Incorporating a dummy Single-Photon Avalanche Diode (SPAD) with a light shielding layer and adjusting impurity concentrations to increase breakdown voltage and quenching efficiency, reducing carrier accumulation and noise by directing excess carriers to a specific electric potential or preventing light incidence.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a silicon photomultiplier element (SiPM) is used to detect light, then sensitivity is improved, but output continues for a longer time under high intensity light causing noise and performance degradation

Engineering Contradiction:
Improvelight detection sensitivityVSAvoidoutput duration
Core Design Contradiction:
Measurement precisionVSDuration of action of moving object

Solution Approach 1:

The sensor is divided into multiple pixels, with at least one dummy pixel added alongside the functional pixels. This segmentation allows the dummy pixel to absorb excess carriers generated under high intensity light, preventing them from affecting the output of functional pixels and reducing prolonged output duration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A dummy pixel acts as an intermediary element that receives and processes excess carriers generated during high intensity light detection. By providing this intermediate pathway, the dummy pixel prevents carrier accumulation in functional pixels, thereby reducing noise and shortening output duration without compromising the sensitivity of the main sensor.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-generated harmful factors

If light shielding is added to prevent carrier generation, then noise is reduced, but device complexity increases

Engineering Contradiction:
Improvenoise from carrier generationVSAvoidsensor structure complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The dummy pixel is integrated into the existing sensor array structure, merging the noise reduction function with the existing pixel architecture. This approach reduces noise from carrier generation without significantly increasing device complexity, as the dummy pixel uses the same structural design as functional pixels and shares common fabrication processes.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables stable operation and reduced performance degradation even under high-intensity light conditions, improving signal-to-noise ratio and enabling early completion of electric signal output for accurate distance measurements.

Implementation Method 1

a first avalanche photodiode... a second avalanche photodiode

Methodology Applied
Scientific EffectAvalanche breakdown: Avalanche Breakdown

Implementation Method 2

the second end of the first quenching device is connected to a pixel terminal... the second end of the second quenching device is connected to an electric potential

Methodology Applied
Scientific EffectElectric field control: Electric Field

Data Source

PatentUS11275156B2Sensor and distance measuring device comprising first and second quenching devices respectively connected to current output terminals of fist and second avalanche photodiodes
Publication Date: 2022.03.15 KK TOSHIBA
  • US11275156B2 patent drawing
  • US11275156B2 patent drawing
  • US11275156B2 patent drawing

AI summary

According to one embodiment, a sensor includes a first avalanche photodiode, a first quenching element, a second avalanche photodiode, and a second quenching element. The first quenching element is connected to a current output terminal of the first avalanche photodiode at one end and is connected to an output terminal at another end. The second avalanche photodiode is arranged adjacent to the first avalanche photodiode. The second quenching element is connected to a current output terminal of the second avalanche photodiode at one end and is connected to a specific electric potential at another end.