Skyrmion Magnetic Element Multilayer Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current magnetic shift registers require large currents to move magnetic domain walls, resulting in low transfer speeds and elongated write and erase times for memory storage, limiting their practical application in high-density data storage and processing.
Innovation Solution
A magnetic element is developed that generates skyrmions, utilizing a two-dimensional stacked film with a magnetic film and non-magnetic films, where the skyrmion phase is induced by an applied magnetic field, allowing for lower current densities and faster data manipulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If magnetic domain walls are driven by currents in conventional magnetic shift registers, then magnetic information can be transferred, but large currents are required resulting in low transfer speeds and elongated write/erase times
Solution Approach 1:
The patent changes the fundamental parameter being manipulated from magnetic domain walls to skyrmions. Skyrmions are topologically protected magnetic textures that can be moved with much lower current densities (by orders of magnitude) compared to conventional domain walls, directly resolving the contradiction between speed and energy consumption.
Solution Approach 2:
The patent employs a composite multilayer structure consisting of magnetic layers, nonmagnetic layers, and chiral interface layers. This composite structure creates the necessary conditions for skyrmion formation and enables their efficient manipulation with low currents, achieving both high speed and low energy consumption.
2Productivity
If large currents are applied to move magnetic domain walls, then information transfer is achieved, but write and erase times are elongated
Solution Approach 1:
By switching from domain wall manipulation to skyrmion manipulation, the patent achieves faster write and erase operations. Skyrmions can be created, moved, and annihilated more rapidly than conventional domain walls, directly improving productivity while reducing the time loss associated with memory operations.
3Quantity of substance
If conventional magnetic shift register structures are used, then magnetic information storage is achieved, but storage density is limited due to the nanoscale magnetic structure requirements
Solution Approach 1:
The patent introduces local chiral interactions at specific interfaces within the multilayer structure, creating regions with unique magnetic properties. These localized chiral interfaces enable skyrmion formation in specific areas, allowing for high-density storage while managing structural complexity through spatially differentiated functionality.
Solution Approach 2:
The composite multilayer structure combines different magnetic and nonmagnetic materials with specific thicknesses and properties. This composite approach enables the realization of complex nanoscale magnetic structures that support skyrmions, achieving high storage density through optimized material composition and layering.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic element enables efficient generation and control of skyrmions, enhancing data storage and processing speeds while reducing power consumption and increasing storage density.
Implementation Method 1
a magnetic element which can generate a skyrmion, a skyrmion memory using the magnetic element
Implementation Method 2
in the two-dimensional stacked film, at least a skyrmion crystal phase in which the skyrmion is generated and a ferromagnetic phase appear in accordance with an applied magnetic field
Implementation Method 3
the present inventors proposed a skyrmion magnetic element which uses a skyrmion generated in a magnet as a unit of storage... proved that a skyrmion could be driven by currents
Data Source
Figure 1
Figure 2(a)~2(e)
Figure 3
AI summary
Provided is a magnetic element which can generate a skyrmion by a stacked film including a magnetic layer and a non- magnetic layer, and a skyrmion memory to which the magnetic element is applied and the like. Provided is a magnetic element for generating a skyrmion, the magnetic element comprising a two-dimensional stacked film, wherein the two-dimensional stacked film is-at least one or more multiple layered films including a magnetic film and a non-magnetic film stacked on the magnetic film. Also, provided is a skyrmion memory including a plurality of the magnetic elements stacked in a thickness direction.