Solid-State Devices TRIZ Cases

Electrode holes in data pad electrodes expose underlying films to prevent peeling and ensure reliable connections.

Silicon solar cells harvest perpendicular light in transparent displays, resolving the trade-off between energy efficiency and optical transmittance.

Concentric frame LED modules route metal wires vertically through substrate holes to eliminate intermediate electrodes, enabling high-density arrays.

Segmented drain electrode design ensures uniform organic layer thickness, preventing over-etching damage to the TFT structure during manufacturing.

A light-emitting device uses facing transistor gates across an intrinsic semiconductor region to control charge carrier flows.

A depletion barrier layer increases internal capacitance in III-nitride semiconductor light-emitting devices.

A bendable display device uses overlapping power supply lines and sensor wires to reduce electrical resistance.

A hybrid display pixel arrangement combines inorganic LEDs with organic emissive stacks to form full-color sub-pixels.

A semiconductor integrated circuit design aligns active region centers with the well boundary to equalize distances and minimize characteristic fluctuations.

A packaging-reserved slot surrounds an installation slot in OLED array substrates to shield organic light-emitting units during manufacturing.

Metal barriers shield organic photodiodes and thin-film transistors from moisture diffusion through flexible polymeric substrates.

Segmented electrodes connect external light-emitting elements to boost emission rates while reducing light loss.

An annealing apparatus uses electromagnetic wave generators and distributed irradiators to heat AMOLED panels for rapid thermal processing.

Metal traces with alternating recesses and protrusions enhance bending reliability in foldable array substrates.

Segmented active regions shift green emission from direct electrical injection to optical excitation, reducing Auger recombination losses.

A roller transfer mechanism aligns integrated circuits onto contact pads, resolving handling damage and throughput bottlenecks in high-volume manufacturing.

A magnetic storage device uses a stacked structure with exchange-coupled anti-ferromagnet and ferromagnet layers to stabilize magnetization.

Asymmetric terminal patterns resolve heat dissipation rotation conflicts by correcting chip ID accuracy via bit-shifting.

Silicide couples vertical channels in stacked CMOS devices, increasing transistor density while managing fabrication complexity.

Plasma surface treatment cleans and etches oxide conductive films to anchor silicon nitride layers, preventing peeling without moisture absorption.

Tilting LED chips on a backplate improves penetration rates for AR/VR applications while maintaining electrical connections.

Hydrogen bonding between organic diluent and polymer side chains suppresses molecular deformation, maintaining quantum efficiency in optoelectronic devices.

Simultaneous heating and compression prevent solder bump collapse during reflow, maintaining uniform height and reducing shorting risks.

Multi-nozzle organic vapor jet printing deposits graded emissive layers with varying host-to-dopant ratios.

Vertically integrated front-side and backside photodetectors increase charge capacity and reduce color crosstalk in small pixel sensors.

A battery protection circuit module package merges internal and external terminal leads with a substrate-mounted device for high integration.

A single organic layer acts as planarization and photo mask to simplify manufacturing, eliminate metal masks, and enable narrow bezels.

Laser irradiation creates gettering regions in thick wafers before thinning, preventing chipping at bonding interfaces and improving manufacturing yield.

Layered optical film balances bending modulus to minimize residual stress and prevent material fatigue in inward folding flexible displays.

A buffer die test interface circuit converts low-frequency external signals into high-frequency internal signals for memory stack testing.

A thin film transistor incorporates oxide clusters between the gate insulating layer and the oxide semiconductor layer to enhance electrical connectivity.

A concave unit reduces the overlapping area between the cathode and wiring lines, lowering parasitic capacitance that disrupts signal flow.

Segmented light emitting layers with an isolation groove prevent Growing Black Spots caused by moisture diffusion through camera holes.

A tensile material strip applies counteracting force to a stacked semiconductor structure.

Vertical trenches confine a substrate resistor in a silicon photomultiplier, reducing fabrication complexity and improving temperature stability.

Forming connecting lines between pixel electrodes creates equivalent lead lines to improve aperture ratio during array substrate manufacturing.

Segmented subpixel electrodes enable independent emission layer activation, reducing power consumption and eliminating precise mask alignment requirements.

Integrating components on one substrate reduces weight, thickness, and manufacturing time while maintaining structural reliability.

A light guide region with lower refractive index blocks incident light from entering adjacent pixels in miniaturized image sensors.

A magnetic element generates skyrmions using a stacked film of magnetic and non-magnetic layers.

A touch substrate design relocates lead wires into the active region to maximize display area.

Independent sub-block erases in 3D flash memory trigger verification and reprogramming of unselected blocks to restore program states altered by interference.

A compact field effect transistor integrates a counter-electrode contact within the gate electrode pattern using a single etching mask.

A buffer layer prevents metal diffusion from the plated metal support substrate, resolving adhesion failures during laser lift-off processes.

Two red dopants with distinct wavelengths improve color rendering index and R9 values beyond single-dopant limits.

A submount-free light emitter package forms a primary optic directly in encapsulant material around the chip.

A stair-structured second light emitting unit improves cladding efficiency of the insulating layer on a transparent substrate.

A light scattering layer redirects side-emitted light from OLED pixels, reducing color shift and increasing contrast.