Skyrmion Memory Element Using Thermal Phase Transitions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional phase-change memories face limitations in speeding up the transition between crystal and amorphous phases, and in achieving sufficient thinning of the amorphous phase, which restricts data storage capacity and processing speed.
Innovation Solution
A magnetic element with a spiral magnetic structure and a skyrmion control unit that generates and controls skyrmions by supplying energy, allowing for efficient phase transitions and data storage through the manipulation of magnetic moments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If phase-change memory uses thermal energy to shift material from crystal phase to amorphous phase, then data storage is achieved through resistance changes, but the transition time is limited and speeds up are restricted
Solution Approach 1:
The patent utilizes phase transitions in magnetic materials, specifically transitioning between ferromagnetic and paramagnetic states through temperature control. By heating the magnetic layer above its Curie temperature and then rapidly cooling it, the system achieves fast magnetic state changes without the slow crystal-to-amorphous phase transitions required in conventional phase-change memories, directly resolving the time limitation contradiction
Solution Approach 2:
The patent employs thermal effects to control magnetic properties by heating the magnetic layer above its Curie temperature to induce paramagnetic state, then using rapid cooling to return to ferromagnetic state. This thermal cycling approach enables fast switching speeds while maintaining reliable data storage through well-defined magnetic phase transitions
2Productivity
If phase-change memory shortens time required for phase transition, then processing speed improves, but further thinning of amorphous phase portion is required which poses technical development issues
Solution Approach 1:
The patent replaces the need for thinning amorphous phase portions with magnetic phase transitions between ferromagnetic and paramagnetic states. This approach achieves fast processing speeds through temporal phase transitions rather than spatial thinning, avoiding the technical complexities of further structure miniaturization while maintaining high productivity
Solution Approach 2:
The patent changes the fundamental parameter used for data storage from physical dimension (thickness of amorphous phase) to magnetic property (magnetization state). By controlling temperature to switch between ferromagnetic and paramagnetic states, the system achieves fast switching without requiring further reduction in physical dimensions, thereby improving processing speed without increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables faster and more reliable data storage and processing by stabilizing skyrmion phases, overcoming the limitations of conventional phase-change memories and enhancing data storage capacity and processing speed.
Implementation Method 1
a skyrmion control unit that generates skyrmion in the magnetic body by supplying energy to the magnetic body that has the spiral magnetic structure
Implementation Method 2
a magnetic body that has a spiral magnetic structure in a stable state
Data Source
AI summary
To provide a magnetic element that controls generation and annihilation of a skyrmion. A magnetic element is provided, and the magnetic element comprises: a magnetic body that has a spiral magnetic structure in a stable state; a skyrmion control unit that generates skyrmion in the magnetic body by supplying energy to the magnetic body that has the spiral magnetic structure. Also, the magnetic element in which the skyrmion control unit brings the magnetic body into an unstable state by supplying thermal energy pulses to the magnetic body is provided. Furthermore, a skyrmion memory comprising the magnetic element is provided.