Slit Copper Grain Structure for Bendable High-Conductivity Bus Bars

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Solution Overview

Problem

Existing pure copper materials used in electronic and electrical devices suffer from insufficient bending workability, leading to cracking during severe working processes like edgewise bending, and require improved electrical conductivity and strength to manage high current flows and heat dissipation.

Innovation Solution

A slit copper material with a purity of 99.96% by mass or greater, a plate width to thickness ratio of 10 or greater, and controlled crystal grain sizes in the plate center and surface layers, ensuring electrical conductivity of 97.0% IACS or greater, improved bending workability, and enhanced strength and heat resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If pure copper material with excellent electrical conductivity is used, then electrical conductivity is improved, but bending workability deteriorates and cracking occurs during severe working

Engineering Contradiction:
Improveelectrical conductivityVSAvoidbending workability
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The invention changes the crystal grain size parameter from the conventional uniform structure to a controlled dual-layer structure with specific grain sizes in plate center (25μm or less) and plate surface layer (30-50μm), resolving the contradiction between electrical conductivity and bending workability by optimizing the crystal grain structure

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention applies different crystal grain sizes to different regions of the copper plate - finer grains (25μm or less) in the plate center for strength and coarser grains (30-50μm) in the plate surface layer for bending workability, while maintaining uniform high electrical conductivity (97.0% IACS or more) throughout the material

Inventive Principle:
Principle #3Local quality

2Reliability

If pure copper material is used to ensure electrical conductivity, then electrical conductivity is improved, but strength deteriorates

Engineering Contradiction:
Improveelectrical conductivityVSAvoidstrength
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The invention optimizes the crystal grain size parameter in the plate center portion to 25μm or less, which increases the strength of the copper material while maintaining high electrical conductivity of 97.0% IACS or more, thereby resolving the contradiction between strength and electrical conductivity

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If complex bending is performed to achieve device design requirements, then adaptability is improved, but cracking occurs due to insufficient bending workability

Engineering Contradiction:
Improvecomplex bending capabilityVSAvoidcracking resistance
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The invention creates a dual-layer crystal grain structure with finer grains (25μm or less) in the plate center for strength and coarser grains (30-50μm) in the plate surface layer for enhanced bending workability, enabling complex bending operations without cracking while maintaining high electrical conductivity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention optimizes the crystal grain size parameters in different regions to improve bending workability, allowing complex bending operations to be performed on copper materials with high electrical conductivity (97.0% IACS or more) without causing cracking

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12281376B2Slit copper material, part for electric/electronic device, bus bar, heat dissipation substrate
Publication Date: 2025.04.22 MITSUBISHI MATERIALS CORP
  • US12281376B2 patent drawing

AI summary

A slit copper material comprises 99.96% by mass or greater of Cu. In this slit copper material, a ratio W/t of a plate width W to a plate thickness t is 10 or greater, an electrical conductivity is 97.0% IACS or greater, a ratio B/A of an average crystal grain size B in a plate surface layer portion to an average crystal grain size A in a plate center portion is in a range of 0.80 or greater and 1.20 or less, and the average crystal grain size A in the plate center portion is 25 μm or less.