Smart Semiconductor Switch Circuit for Capacitive Load Inrush Current

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Solution Overview

Problem

Semiconductor switches face high thermal stress due to inrush currents when switching loads with significant capacitive characteristics, particularly in LED applications, where high inrush currents can lead to damage despite existing protection concepts being inadequate for loads with high inrush currents and low nominal currents.

Innovation Solution

An integrated smart switch circuit with two parts of semiconductor switches that alternate on and off, generating specific drive signals to ensure both parts are in an on-state during an overlap period, distributing heat uniformly and reducing thermal stress through PWM or temperature-triggered switching schemes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single semiconductor switch is used to switch capacitive loads, then the circuit is simple, but high inrush currents cause high thermal stress and potential device damage

Engineering Contradiction:
Improveswitch circuit structureVSAvoidthermal stress resistance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The single semiconductor switch is divided into two separate switches (first semiconductor switch and second semiconductor switch). Each switch handles a portion of the inrush current during switching transitions, thereby reducing the thermal stress on any single device and improving overall reliability when switching capacitive loads

Inventive Principle:
Principle #1Segmentation

2Reliability

If semiconductor switches are protected from excess temperature, then device reliability improves, but protection concepts are inadequate for loads with high inrush currents and low nominal currents

Engineering Contradiction:
Improvetemperature protectionVSAvoidinrush current handling capability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The control circuit is designed to anticipate high inrush current conditions during switching transitions and activates both semiconductor switches simultaneously during the transition period. This preliminary action prevents thermal overload before it occurs, enabling the system to handle capacitive loads with high inrush currents while maintaining temperature protection

Inventive Principle:
Principle #10Preliminary action

3Object-affected harmful factors

If both semiconductor switches are on simultaneously during overlap period, then inrush current is reduced, but switching losses increase

Engineering Contradiction:
Improveinrush currentVSAvoidswitching losses
Core Design Contradiction:
Object-affected harmful factorsVSLoss of energy

Solution Approach 1:

The overlap period where both switches are on is kept brief and controlled, allowing the inrush current to be managed quickly during the transition. The control circuit minimizes the duration of this state to reduce energy losses while still providing adequate protection against inrush current effects

Inventive Principle:
Principle #21Skipping (Rushing through)

Data Source

PatentUS11018664B2Smart semiconductor switch
Publication Date: 2021.05.25 INFINEON TECHNOLOGIES AG
  • US11018664B2 patent drawing
  • US11018664B2 patent drawing
  • US11018664B2 patent drawing

AI summary

An integrated circuit that may be employed as a smart switch. The integrated circuit includes a first part of a semiconductor switch coupled between a supply node and an output node and configured to provide a first current path in accordance with a first drive signal. The integrated circuit further includes a second part of the semiconductor switch coupled between the supply node and the output node and configured to provide a second current path in accordance with a second drive signal. The integrated circuit includes a drive circuit configured to generate, in response to a switch-on command, the first drive signal and the second drive signal such that the first part of the semiconductor switch and the second part of the semiconductor switch are alternatingly switched on and off. During an overlap period, both the first and the second part of the semiconductor switch are in an on-state.