Sn-Alloy Gate-All-Around Transistors Without Junctions
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Solution Overview
Problem
Semiconductor devices, such as gate-all-around transistors, face challenges in speed due to material limitations, necessitating the development of improved materials that can withstand high-temperature processing and offer efficient band gap modulation.
Innovation Solution
The use of alloys like SiSn, GeSn, and SiGeSn with varying atomic percentages of Sn to form transistors with metallic source/drain and semiconducting channels, allowing for high-temperature processing and band gap modulation without the need for junctions, by varying the cross-section of the nanowire structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional materials are used in gate-all-around transistors, then manufacturing is simpler, but device speed is limited due to material limitations
Solution Approach 1:
The patent changes the material parameters by using alloys with varying atomic percentages of Sn (20-90%) to achieve different band gap characteristics. This allows optimization of device speed through material composition control while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The patent employs composite alloy materials (SiSn, GeSn, SiGeSn) that combine different elements to achieve desired electrical properties. These composite materials provide both high-speed performance and compatibility with standard semiconductor manufacturing processes
2Reliability
If junctions are used to achieve band gap modulation, then band gap control is possible, but device complexity increases
Solution Approach 1:
The patent extracts the band gap modulation function from the junction structure and transfers it to the material composition itself. By varying the Sn atomic percentage in the alloy, band gap control is achieved without requiring additional junction structures, thereby simplifying the device architecture
Solution Approach 2:
The patent uses material composition parameters (atomic percentage of Sn) to control band gap characteristics, replacing the need for structural junctions. This parameter-based control achieves reliable band gap modulation while maintaining simpler device structures
Data Source
AI summary
According to another embodiment, a method of forming a transistor is provided. The method includes the following operations: providing a substrate; providing a source over the substrate; providing a channel connected to the source; providing a drain connected to the channel; providing a gate insulator adjacent to the channel; providing a gate adjacent to the gate insulator; providing a first interlayer dielectric between the source and the gate; and providing a second interlayer dielectric between the drain and the gate, wherein at least one of the formation of the source, the drain, and the channel includes about 20-95 atomic percent of Sn.